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In: Russian Microelectronics, Jg. 44 (2015), Heft 1, S. 1-7Online academicJournalZugriff:
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In: Russian Microelectronics, Jg. 49 (2020), Heft 1, S. 30-36Online academicJournalZugriff:
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CMOS-operational amplifier with n-channel output followers, increased gain, and short settling time.In: Russian Microelectronics, Jg. 42 (2013-12-01), Heft 7, S. 408-413Online academicJournalZugriff:
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In: Russian Microelectronics, Jg. 41 (2012-03-01), Heft 2, S. 132-142Online academicJournalZugriff:
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Memory-cell layout as a factor in the single-event-upset susceptibility of submicron dice CMOS SRAM.In: Russian Microelectronics, Jg. 40 (2011-05-01), Heft 3, S. 170-175Online academicJournalZugriff:
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In: Russian Microelectronics, Jg. 42 (2013), Heft 1, S. 40-47Online academicJournalZugriff:
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In: Russian Microelectronics, Jg. 37 (2008-07-01), Heft 4, S. 264-276Online academicJournalZugriff:
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In: Russian Microelectronics, Jg. 47 (2018), Heft 1, S. 20-33Online academicJournalZugriff:
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In: Russian Microelectronics, Jg. 44 (2015), Heft 1, S. 22-26Online academicJournalZugriff:
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In: Russian Microelectronics, Jg. 42 (2013-12-01), Heft 7, S. 396-402Online academicJournalZugriff: