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48 Treffer

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  1. Detailansicht für Treffer 1 öffnen
    Native-Vth MOSFET을 이용한 셀프-캐스코드 구조의 아날로그 성능 분석 : Analog Performance Analysis of Self-cascode Structure with Native-Vth MOSFETs
    이대환 / Dae Hwan Lee ; 백기주 / Ki Ju Baek ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 26 (2013-08-01), Heft 8, S. 575-581
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  2. Detailansicht für Treffer 2 öffnen
    LAVH와 VTH와의 비교연구
    김탁 ; 김영태
    In: 대한산부인과학회 학술발표논문집, Jg. 71 (1993-04-15), S. 69-69
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  3. Detailansicht für Treffer 3 öffnen
    제 71 차 춘계학술대회 : 초록보고 ; LAVH 와 VTH 와의 비교연구
    김탁 ; 이규완
    In: 대한산부인과학회 학술발표논문집, Jg. 81 (1993), S. 69-69
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  4. Detailansicht für Treffer 4 öffnen
    Improvement of Threshold Voltage Shift of In-Ga-Zn-Sn-O Thin Film Transistor for Low-Voltage Display using DUV/Thermal Dual Treatment
    박인표 ; 황부경
    In: 한국공업화학회 연구논문 초록집, Jg. 2023 (2023-05-12), S. 286-286
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  5. Detailansicht für Treffer 5 öffnen
    Trench Gate 하단 P-영역을 갖는 IGBT의 전기적 특성에 관한 연구 : Study on Electric Characteristics of IGBT Having P Region Under Trench Gate
    안병섭 / Byoung Sub Ann ; 육진경 / Jinkeoung Yuek ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 32 (2019-09-01), Heft 5, S. 361-365
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  6. Detailansicht für Treffer 6 öffnen
    500 V 급 Planar Power MOSFET의 P 베이스 농도 변화에 따른 설계 및 특성 향상에 관한 연구 : A Study About Design and Characteristic Improvement According to P-base Concentration Charge of 500 V Planar Power MOSFET
    권영수 / Young Soo Kwon ; 김권제 / Gwon Je Kim ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 26 (2013-04-01), Heft 4, S. 284-288
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  7. Detailansicht für Treffer 7 öffnen
    8인치 Si Power MOSFET Field Ring 영역의 도핑농도 변화에 따른 전기적 특성 비교에 관한 연구 : Characterization and Comparison of Doping Concentration in Field Ring Area for Commercial Vertical MOSFET on 8' Si Wafer
    권영수 / Young Soo Kwon ; 김권제 / Gwon Je Kim ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 26 (2013-04-01), Heft 4, S. 271-274
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  8. Detailansicht für Treffer 8 öffnen
    31세 여성에서 발생한 자궁경부 배아성 횡문근육종 1예 : A Case of Embryonal Rhabdomyosarcoma of the Uterine Cervix in a 31 Year Old Woman
    장진범 / Jin Bum Jang ; 강석호 / Suk Ho Kang ; et al.
    In: Obstetrics & Gynecology Science, Jg. 44 (2001-01-30), Heft 1, S. 202-207
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  9. Detailansicht für Treffer 9 öffnen
    자구탈출증 이외의 적응증에 대한 질식전자궁적출술과 복강경하질식전자궁적출술의 비교 연구 : Comparison study of VTH and LAVH for the indications other than uterine prolapse
    금형용 / Hyung Yong Keum ; 최오성 / Oh Sung Choi ; et al.
    In: Obstetrics & Gynecology Science, Jg. 46 (2003-01-30), Heft 1, S. 120-126
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  10. Detailansicht für Treffer 10 öffnen
    Parylene 고분자 유전체 표면제어를 통한 OFET의 소자 안정성 향상 연구 : Improvement of Operating Stabilities in Organic Field-Effect Transistors by Surface Modification on Polymeric Parylene Dielectrics
    서정윤 / Jungyoon Seo ; 오승택 / Seungteak Oh ; et al.
    In: 접착 및 계면 / Journal of adhesion and interface, Jg. 22 (2021-09-30), Heft 3, S. 91-97
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  11. Detailansicht für Treffer 11 öffnen
    저온 중수소 어닐링을 활용한 Enclosed-Layout Transistors (ELTs) 소자의 제작 및 전기적 특성분석 : Fabrication of Enclosed-Layout Transistors (ELTs) Through Low-Temperature Deuterium Annealing and Their Electrical Characterizations
    왕동현 / Dong-hyun Wang ; 김동호 / Dong-ho Kim ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 37 (2024), Heft 1, S. 43-47
    academicJournal
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  12. Detailansicht für Treffer 12 öffnen
    다양한 Passivation 물질에 따른 IGZO TFT Stability 개선 방법 : IGZO TFT Stability Improvement Based on Various Passivation Materials
    김재민 / Jaemin Kim ; 박진수 / Jinsu Park ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 33 (2020), Heft 1, S. 6-9
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  13. Detailansicht für Treffer 13 öffnen
    아크릴계 단량체 2-HEA와 EGPA의 조성에 따른 고분자 분산형 액정(PDLC)의 전기광학적 특성 평가 : Effect of 2-HEA and EGPA Composition on the Electro-optical Properties of Polymer Dispersed Liquid Crystal
    최종선 / Jongseon Choi ; 김영대 / Young Dae Kim ; et al.
    In: 공업화학 / Applied Chemistry for Engineering, Jg. 30 (2019-04-10), Heft 2, S. 205-211
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  14. Detailansicht für Treffer 14 öffnen
    Evaluating and comparing the effect of high intensity interval training vs. low intense, longer-lasting training on endurance performance in recreational runners.
    Høydal, Kjetil L. ; Hareide, Svein
    In: International Journal of Applied sports sciences (IJASS), Jg. 28 (2016-12-31), Heft 2, S. 101-110
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  15. Detailansicht für Treffer 15 öffnen
    컴퓨터 시스템 및 이론 : 반복된 삭제/쓰기 동작에서 스트레스로 인한 Disturbance를 최소화하는 플래쉬 메모리 블록 삭제 방법 : Computer Systems & Theory : Disturbance Minimization by Stress Reduction During Erase Verify for NAND Flash Memory
    서주완 / Ju Wan Seo ; 최민 / Min Choi
    In: 정보처리학회논문지. 컴퓨터 및 통신시스템 / KIPS Transactions on Computer and Communication Systems, Jg. 5 (2016-01-31), Heft 1, S. 1-6
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  16. Detailansicht für Treffer 16 öffnen
    급속 열처리가 a-IGZO 박막의 전도에 미치는 영향 : Effects of Rapid Thermal Annealing on the Conduction of a-IGZO Films
    김도훈 / Do Hoon Kim ; 조원주 / Won Ju Choa
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 29 (2016), Heft 1, S. 11-16
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  17. Detailansicht für Treffer 17 öffnen
    Al Doped ZnO층 적용을 통한 ZnO 박막 트랜지스터의전기적 특성과 안정성 개선 : Improvement of Electrical Performance and Stability in ZnO Channel TFTs with Al Doped ZnO Layer
    엄기윤 / Ki Yun Eom ; 정광석 / Kwang Seok Jeong ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 28 (2015-05-31), Heft 5, S. 291-294
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  18. Detailansicht für Treffer 18 öffnen
    Regular Paper : A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates
    Jin Seob Kim ; Yu Mi Kim ; et al.
    In: Transactions on Electrical and Electronic Materials / Transactions on Electrical and Electronic Materials, Jg. 15 (2014-12-15), Heft 6, S. 315-319
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  19. Detailansicht für Treffer 19 öffnen
    공정 압력에 따라 제작되어진 비인듐계 SiZnSnO 박막을 이용한 박막트랜지스터의 성능 연구 : Pressure Dependency of Electrical Properties of In-free SiZnSnO Thin Film Transistors
    이상렬 / Sang Yeol Lee
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 25 (2012-08-01), Heft 8, S. 580-583
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  20. Detailansicht für Treffer 20 öffnen
    고압 중수소 열처리에 의한 MOSFETs의 특성 개선에 대한 연구 : Improvement of Electrical Characteristics of MOSFETs Using High Pressure Deuterium Annealing
    정대한 / Dae-han Jung ; 구자윤 / Ja-yun Ku ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 35 (2022-05-01), Heft 3, S. 264-268
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