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- metal oxide semiconductor field-effect transistors 8 Treffer
- mosfet 8 Treffer
- random access memory 8 Treffer
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45 weitere Werte:
- bias temperature instability 6 Treffer
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- logic gates 4 Treffer
- multilayer perceptrons 4 Treffer
- nanoscale devices 4 Treffer
- nanostructured materials 4 Treffer
- phase change memory 4 Treffer
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- quantized neural network 4 Treffer
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- silicon 4 Treffer
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- statistical variation 4 Treffer
- stress measurement 4 Treffer
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- charge fluctuation 2 Treffer
- channel 1 Treffer
- cycle-to-cycle variation (ccv) 1 Treffer
- induced degradation 1 Treffer
- model 1 Treffer
- mosfet degradation 1 Treffer
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In: IEEE Transactions on Electron Devices, Jg. 66 (2019-05-01), Heft 5, S. 2172-2178Online academicJournalZugriff:
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In: IEEE Transactions on Electron Devices, Jg. 64 (2017-06-01), Heft 6, S. 2478-2484Online academicJournalZugriff:
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In: IEEE Transactions on Electron Devices, Jg. 61 (2014-09-01), Heft 9, S. 3081-3089Online academicJournalZugriff: