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Weniger Treffer
Gefunden in
Art der Quelle
Schlagwort
- cross-disciplinary physics: materials science; rheology 105 Treffer
- domaines interdisciplinaires: science des materiaux; rheologie 105 Treffer
- materials science 105 Treffer
- science des materiaux 105 Treffer
- methodes de croissance cristalline; physique de la croissance cristalline 66 Treffer
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45 weitere Werte:
- methods of crystal growth; physics of crystal growth 66 Treffer
- etude experimentale 61 Treffer
- experimental study 61 Treffer
- condensed matter: structure, mechanical and thermal properties 53 Treffer
- etat condense: structure, proprietes mecaniques et thermiques 53 Treffer
- methodes de depot de films et de revetements; croissance de films et epitaxie 47 Treffer
- methods of deposition of films and coatings; film growth and epitaxy 47 Treffer
- compose mineral 46 Treffer
- inorganic compounds 42 Treffer
- cvd 35 Treffer
- depot chimique phase vapeur 35 Treffer
- growth mechanism 32 Treffer
- mecanisme croissance 32 Treffer
- mecanismo crecimiento 32 Treffer
- semiconductor materials 32 Treffer
- theorie et modeles de la croissance cristalline; physique de la croissance cristalline, morphologie cristalline et orientation cristalline 31 Treffer
- theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation 31 Treffer
- croissance en phase fondue; fusion de zone et purification de zone 30 Treffer
- growth from melts; zone melting and refining 30 Treffer
- couche mince 29 Treffer
- croissance cristalline en phase vapeur 29 Treffer
- crystal growth from vapors 29 Treffer
- croissance cristalline en phase fondue 28 Treffer
- crystal growth from melts 28 Treffer
- thin films 28 Treffer
- epitaxie jet moleculaire 24 Treffer
- molecular beam epitaxy 24 Treffer
- semiconducteur 24 Treffer
- diffraction rx 23 Treffer
- silicium 23 Treffer
- silicon 23 Treffer
- xrd 23 Treffer
- applied sciences 22 Treffer
- chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) 22 Treffer
- depot chimique en phase vapeur (incluant le cvd active par plasma, mocvd, etc.) 22 Treffer
- sciences appliquees 22 Treffer
- si 22 Treffer
- structure des liquides et des solides; cristallographie 22 Treffer
- structure of solids and liquids; crystallography 22 Treffer
- surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) 22 Treffer
- surfaces et interfaces; couches minces et trichites (structure et proprietes non electroniques) 22 Treffer
- epitaxie par faisceaux chimiques, ioniques, atomiques et moleculaires 21 Treffer
- molecular, atomic, ion, and chemical beam epitaxy 21 Treffer
- etude theorique 20 Treffer
- ge si 20 Treffer
Publikation
- molecular beam epitaxy 1998 5 Treffer
- crystal growth 1998: proceedings of the 12th conference on crystal growth and the 10th international conference on vapor growth and epitaxy, jerusalem, israel, july 26-31, 1998. part 1: 12th international conference on crystal growth. sections i-xi 3 Treffer
- iccg-13/icvge-11: proceedings of the thirteen international conference on crystal growth in conjuction with the eleventh international conference on vapor growth and epitaxy, kyoto, japan, 30 july-4 august 2001. part 1 2 Treffer
- iccg-13/icvge-11: proceedings of the thirteenth international conference on crystal growth in conjunction with the eleventh international conference on vapor growth and epitaxy, kyoto, japan, 30 july - 4 august 2001. part 3 2 Treffer
- symposium c on growth, characterisation and applications of bulk ii-vis 2 Treffer
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7 weitere Werte:
- 14th international conference on molecular beam epitaxy (mbe-xiv), 3-8 september 2006, tokyo, japan 1 Treffer
- iccg-14/icvge-12 2004. proceedings of the 14th international conference on crystal growth and 12th international conference on vapor growth and epitaxy, grenoble, france-9-13 august 2004 1 Treffer
- mbe xiii, 2004: 13th international conference on molecular beam epitaxy, edinburgh, uk, 22-27 august 2004 1 Treffer
- modeling in crystal growth: proceedings of the third international workshop, hauppauge, new york, usa, 18-20 october 2000 1 Treffer
- molecular beam epitaxy 2000. proceedings of the eleventh international conference on molecular beam epitaxy, beijing, china, 11-15 september 2000 1 Treffer
- molecular beam epitaxy 2002: proceedings of the twelfth international conference on molecular beam epitaxy, san francisco, ca, usa, 15-20 september 2002 1 Treffer
- proceedings of the eighth international conference on defects - recognition, imaging and physics in semiconductors, narita, japan, september 15-18, 1999 1 Treffer
Sprache
123 Treffer
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In: Journal of crystal growth, Jg. 409 (2015), S. 89-94academicJournalZugriff:
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In: Journal of crystal growth, Jg. 390 (2014), S. 125-128academicJournalZugriff:
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In: Journal of crystal growth, Jg. 392 (2014), S. 66-73academicJournalZugriff:
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In: 14th International Conference on Molecular Beam Epitaxy (MBE-XIV), 3-8 September 2006, Tokyo, Japan, Jg. 301-302 (2007), S. 281-284KonferenzZugriff:
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In: MBE XIII, 2004: 13th International Conference on Molecular Beam Epitaxy, Edinburgh, UK, 22-27 August 2004, Jg. 278 (2005), Heft 1-4, S. 83-87KonferenzZugriff:
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In: ICCG-14/ICVGE-12 2004. Proceedings of the 14th international conference on crystal growth and 12th international conference on vapor growth and epitaxy, Grenoble, France-9-13 August 2004, Jg. 275 (2005), Heft 1-2, S. 99-105KonferenzZugriff:
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In: Molecular beam epitaxy 2002: proceedings of the twelfth international conference on molecular beam epitaxy, San Francisco, CA, USA, 15-20 September 2002, Jg. 251 (2003), Heft 1-4, S. 342-346KonferenzZugriff:
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In: Journal of crystal growth, Jg. 364 (2013), S. 118-122academicJournalZugriff:
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In: Journal of crystal growth, Jg. 380 (2013), S. 157-162academicJournalZugriff:
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In: Journal of crystal growth, Jg. 371 (2013), S. 77-83academicJournalZugriff:
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In: Journal of crystal growth, Jg. 377 (2013), S. 17-21academicJournalZugriff:
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In: Journal of crystal growth, Jg. 371 (2013), S. 130-133academicJournalZugriff:
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In: ICCG-13/ICVGE-11: Proceedings of the Thirteenth International Conference on Crystal Growth in conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July - 4 August 2001. Part 3, Jg. 237-39 (2002), S. 2035-2040KonferenzZugriff:
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In: ICCG-13/ICVGE-11: Proceedings of the thirteen International Conference on Crystal Growth in conjuction with the eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July-4 August 2001. Part 1, Jg. 237-39 (2002), S. 227-233KonferenzZugriff:
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In: ICCG-13/ICVGE-11: Proceedings of the Thirteenth International Conference on Crystal Growth in conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July - 4 August 2001. Part 3, Jg. 237-39 (2002), S. 1762-1768KonferenzZugriff:
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In: ICCG-13/ICVGE-11: Proceedings of the thirteen International Conference on Crystal Growth in conjuction with the eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July-4 August 2001. Part 1, Jg. 237-39 (2002), S. 621-628KonferenzZugriff:
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In: Modeling in Crystal Growth: proceedings of the third International Workshop, Hauppauge, New York, USA, 18-20 October 2000, Jg. 230 (2001), Heft 1-2, S. 188-194KonferenzZugriff:
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In: Molecular Beam Epitaxy 2000. Proceedings of the Eleventh International Conference on Molecular Beam Epitaxy, Beijing, China, 11-15 September 2000, Jg. 227-28 (2001), S. 893-898KonferenzZugriff:
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In: Journal of crystal growth, Jg. 347 (2012), Heft 1, S. 37-44academicJournalZugriff:
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In: Journal of crystal growth, Jg. 339 (2012), Heft 1, S. 1-7academicJournalZugriff: