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- insulated gate bipolar transistor (igbt) 2 Treffer
- low-temperature sintering 2 Treffer
- microstructure 2 Treffer
- sintering 2 Treffer
- thermal impedance 2 Treffer
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45 weitere Werte:
- thermal resistance 2 Treffer
- argent 1 Treffer
- basse pression 1 Treffer
- champ temperature 1 Treffer
- chip 1 Treffer
- condensed matter physics 1 Treffer
- condensed matter: structure, mechanical and thermal properties 1 Treffer
- condensed state physics 1 Treffer
- cracks 1 Treffer
- cristallographie cristallogenese 1 Treffer
- crystallography 1 Treffer
- dependance temperature 1 Treffer
- die-attach 1 Treffer
- drying 1 Treffer
- duree maintien 1 Treffer
- echelle nanometrique 1 Treffer
- effet temperature 1 Treffer
- electrical and electronic engineering 1 Treffer
- electrical impedance 1 Treffer
- electronic, optical and magnetic materials 1 Treffer
- electronics 1 Treffer
- electronique 1 Treffer
- equipment and supplies 1 Treffer
- etat condense: structure, proprietes mecaniques et thermiques 1 Treffer
- exact sciences and technology 1 Treffer
- fissure 1 Treffer
- frittage 1 Treffer
- heat treatments 1 Treffer
- holding time 1 Treffer
- insulated gate bipolar transistors 1 Treffer
- low pressure 1 Treffer
- materials chemistry 1 Treffer
- materials science 1 Treffer
- mesure temperature 1 Treffer
- metallurgie, soudage 1 Treffer
- metallurgy 1 Treffer
- metallurgy, welding 1 Treffer
- microscopie electronique balayage 1 Treffer
- nanometer scale 1 Treffer
- nanoscopic scale 1 Treffer
- nanostructure 1 Treffer
- nanostructures 1 Treffer
- phenomene transitoire 1 Treffer
- physics 1 Treffer
- physique 1 Treffer
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In: Journal of electronic materials, Jg. 41 (2012), Heft 11, S. 3152-3160Online academicJournalZugriff:
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In: Journal of Electronic Materials, Jg. 41 (2012-11-01), Heft 11, S. 3152-3160Online academicJournalZugriff:
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In: Journal of Electronic Materials, Jg. 41 (2012-09-08), S. 3152-3160Online unknownZugriff: