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16 Treffer

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  1. Detailansicht für Treffer 1 öffnen
    Deposition and characterization of zirconium tin titanate thin films as a potential high-k material for electronic devices
    MAYS, F. L ; HESS, Dennis W ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 309-315
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  2. Detailansicht für Treffer 2 öffnen
    An accurate continuous level indication for precursor bubblers
    KANJOLIA, R. K ; ODEDRA, R ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 236-240
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  3. Detailansicht für Treffer 3 öffnen
    Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry
    BCHIR, Omar J ; GREEN, Kelly M ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 280-288
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  4. Detailansicht für Treffer 4 öffnen
    Structure and properties of GaNxOy films grown by nitridation of GaAs (1 0 0) substrates
    DE LUCAS, M. C ; FABREGUETTE, F ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 324-329
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  5. Detailansicht für Treffer 5 öffnen
    Performance of sub-atmospheric pressure hydride gas source and delivery system for MOCVD
    RAYNOR, M. W ; HOULDING, V. H ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 241-248
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  6. Detailansicht für Treffer 6 öffnen
    Performance of single use purifiers vs. regenerable purifiers for growth of high brightness gallium nitride LEDs
    TORRES, Robert ; WATANABE, Tadaharu ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 231-235
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  7. Detailansicht für Treffer 7 öffnen
    Metalorganic chemical vapor deposition and characterizations of epitaxial MgxZn1-x-O (0≤x≤0.33) films on r-sapphire substrates
    MUTHUKUMAR, S ; CHEN, Y ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 316-323
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  8. Detailansicht für Treffer 8 öffnen
    MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
    KUO, H. C ; CHANG, Y. S ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 355-358
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  9. Detailansicht für Treffer 9 öffnen
    In situ stress measurements during the MOCVD growth of A1N buffer layers on (1 1 1) Si substrates
    RAGHAVAN, Srinivasan ; REDWING, Joan M
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 294-300
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  10. Detailansicht für Treffer 10 öffnen
    In situ strain control during MOCVD growth of high-quality InP-based long wavelength distributed Bragg reflectors
    HOFFMAN, Richard W ; MURPHY, Michael ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 301-308
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  11. Detailansicht für Treffer 11 öffnen
    Fundamental kinetics determining growth rate profiles of InP and GaAs in MOCVD with horizontal reactor
    IM, Ik-Tae ; HO JIN, OH ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 214-224
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  12. Detailansicht für Treffer 12 öffnen
    Effect of initial process conditions on the structural properties of AlN films
    PADUANO, Q. S ; WEYBURNE, D. W ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 259-265
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  13. Detailansicht für Treffer 13 öffnen
    The impact of growth parameters on the formation of InAs quantum dots on GaAs(1 0 0) by MOCVD
    CEDERBERG, J. G ; KAATZ, F. H ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 197-203
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  14. Detailansicht für Treffer 14 öffnen
    Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD
    ODA, Yasuhiro ; WATANABE, Noriyuki ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 393-397
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  15. Detailansicht für Treffer 15 öffnen
    Characterization of optical and electrical quality of Mg-doped InxGa1-xN grown by MOCVD
    LEE, Sung-Nam ; SAKONG, Tan ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 249-252
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  16. Detailansicht für Treffer 16 öffnen
    Nature of the parasitic chemistry during AlGaInN OMVPE
    CREIGHTON, J. Randall ; WANG, George T ; et al.
    In: OMVPE-11: proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy, held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials, 20-24 July 2003, Keystone, Colorado, Jg. 261 (2004), Heft 2-3, S. 204-213
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