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43 Treffer

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  1. Detailansicht für Treffer 1 öffnen
    New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Mironov, O. A. ; Hassan, A. H. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 61-64
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  2. Detailansicht für Treffer 2 öffnen
    Challenges in CMOS-based images : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Roy, F. ; Tournier, A. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 50-56
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  3. Detailansicht für Treffer 3 öffnen
    Low temperature plasma oxidation for advanced 3D CMOS-based devices : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Niess, J. ; Kegel, W. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 37-40
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  4. Detailansicht für Treffer 4 öffnen
    Advanced Extra Functionality CMOS-based Devices : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Cristiano, F. ; Pichler, P. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 7-8
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  5. Detailansicht für Treffer 5 öffnen
    Gate-engineering-based approach to improve the nanoscale DG MOSFET behavior against interfacial trap effects : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Bentrcia, T. ; Djeffal, F. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 77-80
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  6. Detailansicht für Treffer 6 öffnen
    Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Mouis, M. ; Lee, J. W. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 138-145
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  7. Detailansicht für Treffer 7 öffnen
    Influence of Poisson equation boundary conditions and quantum corrections to carrier concentrations at material interfaces in TCAD process simulation : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Tsibizov, A. ; Terterian, A. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 101-104
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  8. Detailansicht für Treffer 8 öffnen
    Analytical expressions for the drain current of a nanotransistor in the off-state regime : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Krahlisch, M. ; Wulf, U. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 113-116
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  9. Detailansicht für Treffer 9 öffnen
    Thermal properties of quantum devices in integrated circuits embedded in a chip environment : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Kso, M. ; Wulf, U. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 105-108
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  10. Detailansicht für Treffer 10 öffnen
    Impedance spectroscopy of polysilicon in SOI structures : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Druzhinin, A. ; Ostrovskii, I. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 156-159
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  11. Detailansicht für Treffer 11 öffnen
    Simulation of the boron build-up formation during melting laser thermal annealing : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Hackenberg, M. ; Huet, K. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 89-92
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  12. Detailansicht für Treffer 12 öffnen
    New junctionless RADFET dosimeter design for low-cost radiation monitoring applications : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Arar, D. ; Djeffal, F. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 65-68
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  13. Detailansicht für Treffer 13 öffnen
    Deactivation of phosphorus in silicon due to implanted nitrogen : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Chang, R. D. ; Lin, C. H.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 24-27
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  14. Detailansicht für Treffer 14 öffnen
    On an improved boron segregation calibration from a particularly sensitive power MOS process : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Koffel, S. ; Burenkov, A. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 12-15
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  15. Detailansicht für Treffer 15 öffnen
    Application of atomic layer deposited dopant sources for ultra-shallow doping of silicon : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Kalkofen, B. ; Amusan, A. A. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 41-45
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  16. Detailansicht für Treffer 16 öffnen
    Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Kamiyama, E. ; Sueoka, K. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 85-88
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  17. Detailansicht für Treffer 17 öffnen
    Laser thermal anneal formation of atomically-flat low-resistive germanide contacts : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Huet, K. ; Shayesteh, M. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 169-173
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  18. Detailansicht für Treffer 18 öffnen
    Large boron-interstitial cluster modelling in BF3 plasma implanted silicon : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Essa, Z. ; Cristiano, F. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 117-120
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  19. Detailansicht für Treffer 19 öffnen
    Dopant/carrier profiling for 3D-structures : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Vandervorst, W. ; Schulze, A. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 121-129
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  20. Detailansicht für Treffer 20 öffnen
    Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation : Physics and technology of advanced extra functionality CMOS-based devices; Papers presented at the E-MRS spring meeting - symposium K: Physics and technology of advanced extra functionality CMOS-based devices : Strasbourg, France, 27-31 May 2013
    Nyamhere, C. ; Cristiano, F. ; et al.
    In: PHYSICA STATUS SOLIDI C CONFERENCES, Jg. 11 (2014), Heft 1, S. 146-149
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