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Weniger Treffer
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Art der Quelle
Schlagwort
- carbon nanotubes 8 Treffer
- nanotube carbone 8 Treffer
- nanotubes 8 Treffer
- raman spectra 6 Treffer
- spectre raman 6 Treffer
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- microscopie electronique balayage 5 Treffer
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- chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) 4 Treffer
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Verlag
Publikation
- electronics properties of novel nanostructures: with contributions from the 20th international winterschool/euroconference on electronic properties of novel materials, kirchberg, tirol, austria, 4-11 march 2006 5 Treffer
- proceedings (part b.1) of the fourth international conference on nitride semiconductors, icns-4, denver, colorado, usa, july 16-20, 2001 3 Treffer
- wide band gap ii-vi semiconductors: growth, characterization and applications, warsaw, 4-8 september 2006 1 Treffer
Sprache
14 Treffer
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In: Electronics properties of novel nanostructures: with contributions from the 20th International WinterSchool/Euroconference on Electronic Properties of Novel Materials, Kirchberg, Tirol, Austria, 4-11 March 2006, Jg. 243 (2006), Heft 13, S. 3524-3527Online KonferenzZugriff:
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In: Electronics properties of novel nanostructures: with contributions from the 20th International WinterSchool/Euroconference on Electronic Properties of Novel Materials, Kirchberg, Tirol, Austria, 4-11 March 2006, Jg. 243 (2006), Heft 13, S. 3077-3081Online KonferenzZugriff:
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In: Physica status solidi. B. Basic research, Jg. 248 (2011), Heft 11, S. 2504-2507Online academicJournalZugriff:
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In: Electronics properties of novel nanostructures: with contributions from the 20th International WinterSchool/Euroconference on Electronic Properties of Novel Materials, Kirchberg, Tirol, Austria, 4-11 March 2006, Jg. 243 (2006), Heft 13, S. 3122-3125Online KonferenzZugriff:
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In: Electronics properties of novel nanostructures: with contributions from the 20th International WinterSchool/Euroconference on Electronic Properties of Novel Materials, Kirchberg, Tirol, Austria, 4-11 March 2006, Jg. 243 (2006), Heft 13, S. 3138-3141Online KonferenzZugriff:
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In: Proceedings (Part B.1) of the Fourth International Conference on Nitride Semiconductors, ICNS-4, Denver, Colorado, USA, July 16-20, 2001, Jg. 228 (2001), Heft 1, S. 187-190Online KonferenzZugriff:
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In: Proceedings (Part B.1) of the Fourth International Conference on Nitride Semiconductors, ICNS-4, Denver, Colorado, USA, July 16-20, 2001, Jg. 228 (2001), Heft 1, S. 165-168Online KonferenzZugriff:
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In: Proceedings (Part B.1) of the Fourth International Conference on Nitride Semiconductors, ICNS-4, Denver, Colorado, USA, July 16-20, 2001, Jg. 228 (2001), Heft 1, S. 191-194Online KonferenzZugriff:
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In: Physica status solidi. B. Basic research, Jg. 248 (2011), Heft 11, S. 2736-2739Online academicJournalZugriff:
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In: Physica status solidi. B. Basic research, Jg. 245 (2008), Heft 5, S. 959-962Online academicJournalZugriff:
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In: Wide band gap II-VI semiconductors: growth, characterization and applications, Warsaw, 4-8 September 2006, Jg. 244 (2007), Heft 5, S. 1567-1572Online KonferenzZugriff:
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In: Electronics properties of novel nanostructures: with contributions from the 20th International WinterSchool/Euroconference on Electronic Properties of Novel Materials, Kirchberg, Tirol, Austria, 4-11 March 2006, Jg. 243 (2006), Heft 13, S. 3054-3057Online KonferenzZugriff:
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In: Physica status solidi. B. Basic research, Jg. 248 (2011), Heft 11, S. 2536-2539Online academicJournalZugriff:
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In: Physica status solidi. B. Basic research, Jg. 248 (2011), Heft 11, S. 2528-2531Online academicJournalZugriff: