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91 Treffer

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  1. Detailansicht für Treffer 1 öffnen
    Mist-CVD법으로 증착된 다결정 산화갈륨 박막의 MOSFET 소자 특성 연구 : Characteristics of MOSFET Devices with Polycrystalline-Gallium-Oxide Thin Films Grown by Mist-CV
    서동현 / Dong-hyun Seo ; 김용현 / Yong-hyeon Kim ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 33 (2020-09-01), Heft 5, S. 427-431
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  2. Detailansicht für Treffer 2 öffnen
    가속기 백색광 X-Ray Topography를 이용한 CVD 단결정 다이아몬드 내부 전위 분석 : Dislocation Analysis of CVD Single Crystal Diamond Using Synchrotron White Beam X-Ray Topography
    유영재 / Yeong-jae Yu ; 정성민 / Seong-min Jeong ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 32 (2019-05-01), Heft 3, S. 192-195
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  3. Detailansicht für Treffer 3 öffnen
    레이저 CVD 텅스텐막 증착을 통한 TFT LCD 불량배선 수리 : Repairing of a Defective Metallic Line using Laser CVD Deposited Tungsten Film in TFT LCD
    김석군 ; 손정석
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 17 (2004-10-01), Heft 10, S. 1114-1119
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  4. Detailansicht für Treffer 4 öffnen
    기타 : 열 CVD법으로 증착된 SnO2 박막의 미세구조와 전기적 특성 : Other : Microstructure and Electrical Properties of SnO2 Thin Films Grown by Thermal CVD Method
    정진 / Jin Jeong ; 최승평 / Seong Pyung Choi ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 16 (2003-05-15), Heft 5, S. 441-447
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  5. Detailansicht für Treffer 5 öffnen
    Characterizations of i-a-Si:H and p-a-SiC:H Film using ICP-CVD Method to the Fabrication of Large-area Heterojunction Silicon Solar Cells
    Chae Hwan Jeonga ; Min Sung Jeon ; et al.
    In: Transactions on Electrical and Electronic Materials / Transactions on Electrical and Electronic Materials, Jg. 9 (2008-04-25), Heft 2, S. 73-78
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  6. Detailansicht für Treffer 6 öffnen
    화학기상증착법(CVD)을 이용한 탄화규소(SiC) 에피택셜 성장
    김현우 ; 김형준
    In: E²M-전기 전자와 첨단 소재 / Electrical & Electronic Materials, Jg. 30 (2017-06-01), Heft 6, S. 29-39
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  7. Detailansicht für Treffer 7 öffnen
    GIS 스페이서 내장형 저전력 측정용 변압기의 설계 및 제작 : Design and Fabrication of an LPVT Embedded in a GIS Spacer
    박성관 / Seung-gwan Park ; 이경렬 / Gyeong-yeol Lee ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 37 (2024-03-01), Heft 2, S. 175-181
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  8. Detailansicht für Treffer 8 öffnen
    Regular Paper : A Study of Deposition Mechanism of Laser CVD SiO2 Film
    Yung Kwon Sung ; Jeong Myeon Song ; et al.
    In: Transactions on Electrical and Electronic Materials / Transactions on Electrical and Electronic Materials, Jg. 4 (2003-10-30), Heft 5, S. 33-37
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  9. Detailansicht für Treffer 9 öffnen
    Poly-Si Thin Film Solar Cells by Hot-wire CVD
    Lee, J. C. ; Chung, Y. S. ; et al.
    In: 한국전기전자재료학회 하계학술대회 논문집 / Proceeding of the KIEEME Annual Summer Conference, Jg. 2003 (2003-07-10), Heft 1, S. 1034-1037
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  10. Detailansicht für Treffer 10 öffnen
    The Passivation of GaAs Surface by Laser CVD
    Yung Kwon Sung ; Jeong Myeon Song ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 16 (2003), Heft 12s, S. 1242-1247
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  11. Detailansicht für Treffer 11 öffnen
    Thermal CVD법을 이용한 박막전극의 개발 및 리튬이차전지의 음극특성 : Development of Thin Film Electrode by Thermal CVD and Its Anode Characteristics for Lithium Battery
    이영호 / Young Ho Lee ; 김성일 / Seong Ii Kim ; et al.
    In: 한국전기전자재료학회 하계학술대회 논문집 / Proceeding of the KIEEME Annual Summer Conference, Jg. 2006 (2006-06-30), Heft 1, S. 378-379
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  12. Detailansicht für Treffer 12 öffnen
    Ni 금속 박막위 그라핀 CVD 성장 연구 : CVD Growth of Grapbene on a Thin Ni Film
    최인성 / In Sung Choi ; 김은호 / Eun Ho Kim ; et al.
    In: 한국전기전자재료학회 하계학술대회 논문집 / Proceeding of the KIEEME Annual Summer Conference, Jg. 2009 (2009-06-30), S. 425-425
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  13. Detailansicht für Treffer 13 öffnen
    CVD에 의한 고전력 디바이스용 단결정 3C-SiC 박막 성장 : Growth of Single Crystalline 3C-SiC Thin Films for High Power Devices by CVD
    정귀상 / Gwiy Sang Chung ; 심재철 / Jae Cheol Shim
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 23 (2010-02-01), Heft 2, S. 98-102
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  14. Detailansicht für Treffer 14 öffnen
    Hot-wall CVD에서의 SiC 단결정 박막의 초기 성장 거동 : Initial growth behavior of SiC homoepitaxy in hot-wall CVD
    방욱 / Wook Bahng ; 정희종 / Hui Jong Cheong ; et al.
    In: 한국전기전자재료학회 하계학술대회 논문집 / Proceeding of the KIEEME Annual Summer Conference, Jg. 2005 (2005-06-30), S. 174-175
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  15. Detailansicht für Treffer 15 öffnen
    플라즈마 CVD 법을 이용한 대면적 균일한 비정질 탄소 막 증착 : Large-area Uniform Deposition of Amorphous Hydrogenated Carbon Films using a Plasma CVD Method
    윤상민 / Sang Min Yun ; 양성채 / Sung Chae Yang
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 22 (2009-05-01), Heft 5, S. 411-414
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  16. Detailansicht für Treffer 16 öffnen
    미스트화학기상증착 시스템의 Hot Zone 내 사파이어 기판 위치에 따른 β-Ga<subscript>2</subscript>O<subscript>3</subscript> 이종 박막 성장 거동 연구 : Growth Behavior of Heteroepitaxial β-Ga<subscript>2</subscript>O<subscript>3</subscript> Thin Films According to the Sapphire Substrate Position in the Hot Zone of the Mist Chemical Vapor Deposition System
    김경호 / Kyoung-ho Kim ; 이희수 / Heesoo Lee ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 36 (2023-09-01), Heft 5, S. 500-504
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  17. Detailansicht für Treffer 17 öffnen
    MEMS 적용을 위한 Thermal CVD 방법에 의해 증착한 SiC막의 반응성 이온 Etching 특성 평가 : Reactive ion Etching Characterization of SiC Film Deposited by Thermal CVD Method for MEMS Application
    최기용 / Choe Gi Yong ; 최덕균 / Choe Deog Gyun ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 17 (2004-03-01), Heft 3, S. 299-304
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  18. Detailansicht für Treffer 18 öffnen
    센서,박막재료 (2) : MEMS 적용을 위한 thermal CVD 방법에 의해 증착한 SiC막의 etching 특성 평가 : Reactive ion etching characterization of SiC film deposited by thermal CVD method for MEMS application
    최기용 / Choe Gi Yong ; 최덕균 / Choe Deog Gyun ; et al.
    In: 한국전기전자재료학회 하계학술대회 논문집 / Proceeding of the KIEEME Annual Summer Conference, Jg. 2003 (2003-07-10), Heft 1, S. 868-871
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  19. Detailansicht für Treffer 19 öffnen
    텅스텐 플러그 CVD 공정에서 SIH4 Soak의 영향 : SIH4 Soak Effects in the W plug CVD Process
    이우선 / Woo Sun Lee ; 서용진 / Yong Jin Seo ; et al.
    In: 전기전자재료학회논문지(J. Korean Inst. Electr. Electron. Mater. Eng.) / Journal of the Korean Institute of Electrical and Electronic Material Engineers, Jg. 16 (2003-01-15), Heft 1, S. 1-4
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  20. Detailansicht für Treffer 20 öffnen
    Regular Papers : CVD Graphene Synthesis on Copper Foils and Doping Effect by Nitric Acid
    Oh, Teresa
    In: Transactions on Electrical and Electronic Materials / Transactions on Electrical and Electronic Materials, Jg. 14 (2010-10-25), Heft 5, S. 246-249
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