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In: Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications / Fred Semendy [and three others].; (2012)Online Buch
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In: a-SiGe:H materials and devices deposited by hot wire CVD using a tantalum filament operated at low temperature [electronic resource] / A.H. Mahan ... [et al.].; (2005)Online Buch
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In: Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications / Fred Semendy [and three others].; (2012)Online Buch