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In: Journal of Applied Physics, Jg. 128 (2020-09-14), S. 104101-104101Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 123 (2018-06-14), S. 225701-225701Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 125 (2019-05-21), S. 194501-194501Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 127 (2020-02-21), S. 074502-74502Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 126 (2019-08-28), S. 083103-83103Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 123 (2018-01-14), S. 024508-24508Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 124 (2018-10-21), S. 152107-152107Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 122 (2017-12-21), S. 234304-234304Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 124 (2018-10-21), S. 152001-152001Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 119 (2016-01-28), S. 044507-44507Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 121 (2017-06-14), S. 223905-223905Online unknownZugriff:
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In: Journal of Applied Physics, 2011Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 111 (2012-05-01), S. 093925-93925Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 115 (2014-05-07), S. 17D509Online unknownZugriff:
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In: Journal of Applied Physics, Jg. 119 (2016-02-07), S. 054303-54303Online unknownZugriff:
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High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistorsIn: Journal of Applied Physics, Jg. 105 (2009-04-01), S. 074505-74505Online unknownZugriff: