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Weniger Treffer
Gefunden in
Art der Quelle
Schlagwort
- transistors 116 Treffer
- mos transistor 110 Treffer
- transistor mos 110 Treffer
- lightly doped drain 51 Treffer
- hot carrier 33 Treffer
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45 weitere Werte:
- portador caliente 33 Treffer
- porteur chaud 33 Treffer
- caracteristica corriente tension 31 Treffer
- caracteristique courant tension 31 Treffer
- drain peu dope 31 Treffer
- voltage current curve 31 Treffer
- estudio experimental 28 Treffer
- etude experimentale 28 Treffer
- experimental study 28 Treffer
- fiabilidad 28 Treffer
- fiabilite 28 Treffer
- reliability 28 Treffer
- caracteristica electrica 27 Treffer
- caracteristique electrique 27 Treffer
- electrical characteristic 27 Treffer
- estudio teorico 24 Treffer
- etude theorique 24 Treffer
- modeling 24 Treffer
- modelisation 24 Treffer
- modelizacion 24 Treffer
- theoretical study 24 Treffer
- canal n 21 Treffer
- degradacion 21 Treffer
- degradation 21 Treffer
- n channel 21 Treffer
- drain legerement dope 18 Treffer
- seuil tension 15 Treffer
- telecommunications 15 Treffer
- umbral tension 15 Treffer
- voltage threshold 15 Treffer
- comparative study 14 Treffer
- estudio comparativo 14 Treffer
- etude comparative 14 Treffer
- silicio 14 Treffer
- silicium 14 Treffer
- silicon 14 Treffer
- caracteristica funcionamiento 13 Treffer
- caracteristique fonctionnement 13 Treffer
- optics 13 Treffer
- optique 13 Treffer
- performance characteristic 13 Treffer
- canal p 12 Treffer
- electron caliente 12 Treffer
- electron chaud 12 Treffer
- hot electron 12 Treffer
Verlag
Publikation
- i.e.e.e. transactions on electron devices 43 Treffer
- ieee electron device letters 29 Treffer
- solid-state electronics 19 Treffer
- electronics letters 9 Treffer
- microelectronics and reliability 7 Treffer
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20 weitere Werte:
- international journal of electronics 4 Treffer
- japanese journal of applied physics 3 Treffer
- ieee transactions on semiconductor manufacturing 2 Treffer
- microelectronics journal 2 Treffer
- 1997 symposium on electrical overstress/electrostatic discharge (eos/esd) 1 Treffer
- 2002 ieee international reliability physics symposium proceedings (dallas tx, 7-11 april 2002) 1 Treffer
- active and passive electronic components 1 Treffer
- archiv fur elektrotechnik (berlin) 1 Treffer
- gaas ic symposium (monterey ca, 20-23 october 2002) 1 Treffer
- iee proceedings. part g. electronic circuits and systems 1 Treffer
- iee proceedings. part i. solid-state and electron devices 1 Treffer
- ieice transactions 1 Treffer
- ispsd '02 : 14th international symposium on power semiconductor devices & ics (santa fe nm, 4-7 june 2002) 1 Treffer
- materials science in semiconductor processing 1 Treffer
- microelectronic engineering 1 Treffer
- physica status solidi. a. applied research 1 Treffer
- physics of semiconductor devices (delhi, 14-18 december 1999) 1 Treffer
- reliability physics of advanced electron devices 1 Treffer
- spie proceedings series 1 Treffer
- technical digest - ieee gallium arsenide integrated circuit symposium 1 Treffer
Sprache
130 Treffer
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In: I.E.E.E. transactions on electron devices, Jg. 37 (1990), Heft 10, S. 2254-2264Online academicJournalZugriff:
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1.1W/mm high power GaAs/InGaP composite channel FET with asymmetrical LDD structure at 26V operationIn: GaAs IC symposium (Monterey CA, 20-23 October 2002), 2002, S. 151-154KonferenzZugriff:
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In: Physics of semiconductor devices (Delhi, 14-18 December 1999), 2000, S. 594-597KonferenzZugriff:
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In: I.E.E.E. transactions on electron devices, Jg. 41 (1994), Heft 7, S. 1239-1248Online academicJournalZugriff:
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In: Microelectronics and reliability, Jg. 38 (1998), Heft 12, S. 1955-1961academicJournalZugriff:
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In: Microelectronic engineering, Jg. 45 (1999), Heft 1, S. 57-69academicJournalZugriff:
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In: I.E.E.E. transactions on electron devices, Jg. 42 (1995), Heft 5, S. 957-962Online academicJournalZugriff:
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In: Solid-state electronics, Jg. 38 (1995), Heft 2, S. 419-424Online academicJournalZugriff:
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In: Solid-state electronics, Jg. 38 (1995), Heft 1, S. 183-187Online academicJournalZugriff:
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In: Solid-state electronics, Jg. 38 (1995), Heft 6, S. 1191-1196Online academicJournalZugriff:
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In: Solid-state electronics, Jg. 37 (1994), Heft 12, S. 1961-1965academicJournalZugriff:
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In: I.E.E.E. transactions on electron devices, Jg. 41 (1994), Heft 7, S. 1222-1226Online academicJournalZugriff:
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In: International journal of electronics, Jg. 76 (1994), Heft 1, S. 65-74Online academicJournalZugriff:
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In: I.E.E.E. transactions on electron devices, Jg. 41 (1994), Heft 9, S. 1618-1622Online academicJournalZugriff:
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In: Solid-state electronics, Jg. 37 (1994), Heft 1, S. 77-82academicJournalZugriff:
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In: I.E.E.E. transactions on electron devices, Jg. 41 (1994), Heft 2, S. 268-271Online academicJournalZugriff:
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In: I.E.E.E. transactions on electron devices, Jg. 41 (1994), Heft 2, S. 186-189Online academicJournalZugriff:
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In: Solid-state electronics, Jg. 36 (1993), Heft 11, S. 1515-1521academicJournalZugriff:
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In: I.E.E.E. transactions on electron devices, Jg. 40 (1993), Heft 4, S. 773-781Online academicJournalZugriff:
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In: I.E.E.E. transactions on electron devices, Jg. 39 (1992), Heft 7, S. 1694-1703Online academicJournalZugriff: