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Weniger Treffer
Gefunden in
Art der Quelle
Schlagwort
- complementary mos technology 25 Treffer
- technologie mos complementaire 25 Treffer
- tecnologia mos complementario 25 Treffer
- circuits electriques, optiques et optoelectroniques 19 Treffer
- electric, optical and optoelectronic circuits 19 Treffer
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45 weitere Werte:
- evaluacion prestacion 18 Treffer
- evaluation performance 18 Treffer
- performance evaluation 18 Treffer
- circuit properties 15 Treffer
- circuits electroniques 15 Treffer
- electronic circuits 15 Treffer
- proprietes des circuits 15 Treffer
- appareillage electronique et fabrication. composants passifs, circuits imprimes, connectique 12 Treffer
- electronic equipment and fabrication. passive components, printed wiring boards, connectics 12 Treffer
- mosfet 12 Treffer
- transistor mosfet 12 Treffer
- circuit integre 11 Treffer
- circuito integrado 11 Treffer
- integrated circuit 11 Treffer
- seuil tension 10 Treffer
- umbral tension 10 Treffer
- voltage threshold 10 Treffer
- circuits numeriques 9 Treffer
- digital circuits 9 Treffer
- inverter 9 Treffer
- ondulador 9 Treffer
- onduleur 9 Treffer
- transistor 9 Treffer
- fiabilidad 7 Treffer
- fiabilite 7 Treffer
- optimisation 7 Treffer
- optimization 7 Treffer
- reliability 7 Treffer
- circuit design 6 Treffer
- conception circuit 6 Treffer
- delay time 6 Treffer
- diseno circuito 6 Treffer
- electronique faible puissance 6 Treffer
- low-power electronics 6 Treffer
- miniaturisation 6 Treffer
- miniaturizacion 6 Treffer
- miniaturization 6 Treffer
- optimizacion 6 Treffer
- temps retard 6 Treffer
- tiempo retardo 6 Treffer
- 8530t 5 Treffer
- caracteristique courant tension 5 Treffer
- commutation 5 Treffer
- conmutacion 5 Treffer
- disipacion energia 5 Treffer
Publikation
- microelectronics and reliability 10 Treffer
- microelectronics journal 7 Treffer
- integration (amsterdam) 5 Treffer
- organic electronics (print) 4 Treffer
- solid-state electronics 4 Treffer
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9 weitere Werte:
- 14th workshop on dielectrics in microelectronics (wodim 2006) 1 Treffer
- journal of crystal growth 1 Treffer
- microelectronic engineering 1 Treffer
- negative-bias-temperature instability (nbti) in mos devices special sectio n 1 Treffer
- reliability of electron devices, failure physics and analysis 1 Treffer
- selected full-length extended papers from the eurosoi 2009 conference 1 Treffer
- special issue with papers selected from the ultimate integration on silicon conference, ulis 2008 1 Treffer
- the international symposium on ion implantation and other applications of ions and electrons - ion 2002, 10-13 june 2002, kazimierz dolny, poland 1 Treffer
- vacuum 1 Treffer
Sprache
33 Treffer
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In: Microelectronics and reliability, Jg. 54 (2014), Heft 1, S. 90-99academicJournalZugriff:
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In: Integration (Amsterdam), Jg. 47 (2014), Heft 4, S. 510-531academicJournalZugriff:
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A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuitsIn: Solid-state electronics, Jg. 91 (2014), S. 81-86academicJournalZugriff:
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In: Microelectronics and reliability, Jg. 53 (2013), Heft 3, S. 349-355academicJournalZugriff:
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In: Microelectronics and reliability, Jg. 53 (2013), Heft 4, S. 592-599academicJournalZugriff:
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In: Reliability of electron devices, failure physics and analysis, Jg. 44 (2004), Heft 9-11, S. 1519-1522KonferenzZugriff:
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In: Microelectronics and reliability, Jg. 51 (2011), Heft 12, S. 2357-2365academicJournalZugriff:
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In: Microelectronics journal, Jg. 41 (2010), Heft 12, S. 897-905academicJournalZugriff:
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In: Microelectronics journal, Jg. 41 (2010), Heft 4, S. 247-255academicJournalZugriff:
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In: Integration (Amsterdam), Jg. 45 (2012), Heft 1, S. 33-45academicJournalZugriff:
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In: Organic electronics (Print), Jg. 10 (2009), Heft 7, S. 1217-1222academicJournalZugriff:
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In: The international symposium on ion implantation and other applications of ions and electrons - ION 2002, 10-13 June 2002, Kazimierz Dolny, Poland, Jg. 70 (2003), Heft 2-3, S. 323-329KonferenzZugriff:
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In: Integration (Amsterdam), Jg. 43 (2010), Heft 3, S. 279-288academicJournalZugriff:
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In: Microelectronics journal, Jg. 40 (2009), Heft 12, S. 1779-1787academicJournalZugriff:
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In: Microelectronic engineering, Jg. 86 (2009), Heft 10, S. 2123-2126academicJournalZugriff:
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In: Microelectronics and reliability, Jg. 45 (2005), Heft 3-4, S. 499-506academicJournalZugriff:
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In: Journal of crystal growth, Jg. 243 (2002), Heft 1, S. 87-93academicJournalZugriff:
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In: Microelectronics and reliability, Jg. 54 (2014), Heft 5, S. 861-874academicJournalZugriff:
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Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliabilityIn: 14TH Workshop on dielectrics in microelectronics (WoDiM 2006), Jg. 47 (2007), Heft 4-5, S. 559-566KonferenzZugriff:
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In: Organic electronics (Print), Jg. 14 (2013), Heft 12, S. 3362-3370academicJournalZugriff: