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Boron-based Pd3B26 alloy cluster as a nanoscale antifriction bearing system: tubular core–shell structure, double π/σ aromaticity, and dynamic structural fluxionalityElectronic supplementary information (ESI) available: Cartesian coordinates for key structures, cluster 1 (Cs, 1A′) and transition-state (TS) structure 2 (Cs, 1A′), of the alloy Pd3B26 cluster system at the PBE0/def2-TZVP level (Table S1); alternative low-lying structures of Pd3B26 cluster at PBE0/def2-TZVP along with their relative energies at two levels of theory (Fig. S1); bond distances, Wiberg bond indices (WBIs), and natural atomic charges for cluster 1 and TS structure 2 (Fig. S2); selected CMOs of cluster 1 and TS structure 2 (Fig. S3, S5 and S6); AdNDP bonding schemes for cluster 1 and TS structure 2 (Fig. S4 and S7); and a short movie extracted from the BOMD simulation for Pd3B26 cluster at near room temperature of 300 K. See DOI: https://doi.org/10.1039/d3cp03159d

Feng, Lin-Yan ; Guo, Jin-Chang ; et al.

In: Physical chemistry chemical physics, Jg. 25 (2023), Heft 39, S. 26443-26454

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Linear conductance update improvement of CMOS-compatible second-order memristors for fast and energy-efficient training of a neural network using a memristor crossbar arrayElectronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d3nh00121k

Park, See-On ; Park, Taehoon ; et al.

In: Nanoscale horizons, Jg. 8 (2023), Heft 10, S. 1366-1376

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Ferroelectric synaptic devices based on CMOS-compatible HfAlOx for neuromorphic and reservoir computing applicationsElectronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d3nr01294h

Kim, Dahye ; Kim, Jihyung ; et al.

In: Nanoscale, Jg. 15 (2023), Heft 18, S. 8366-8376

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Role of the electrolyte layer in CMOS-compatible and oxide-based vertical three-terminal ECRAMElectronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d2tc05552j

Han, Geonhui ; Seo, Jongseon ; et al.

In: Journal of materials chemistry.C, Jg. 11 (2023), Heft 15, S. 5167-5173

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Boron-based tubular BeB12+ and quasi-planar BeB120/− clusters: structural transformation and chemical bondingElectronic supplementary information (ESI) available: alternative low-lying isomers of clusters 1/2/3 of BeB12+/0/− at the PBE0-D3/6-311+G(d) level (Fig. S1−S3); WBIs and natural atomic charges of GM structures for BeB12+/0/− clusters (Fig. S4); bond distances, WBIs, and natural atomic charges of the LM structure for BeB12 (Fig. S5); an alternative AdNDP bonding scheme of the tubular BeB12+ cluster (Fig. S6); occupied CMOs of the GM and AdNDP scheme of LM structures for the neutral BeB12 cluster (Fig. S7 and S8); selected optimized structures for tubular BeB12+, LiB12, and Li2B12 (Fig. S9); displacement vectors of soft vibrational modes of GM and TS structures of cluster 2 (Fig. S10). See DOI: https://doi.org/10.1039/d2nj04951a

Feng, Lin-Yan ; Wang, Ying-Jin ; et al.

In: New journal of chemistry, Jg. 47 (2023), Heft 6, S. 2736-2746

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Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations.

Koh, EK ; Dananjaya, PA ; et al.

In: Nanoscale horizons, Jg. 9 (2024-04-29), Heft 5, S. 828-842

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Adjusting surface coverage of Pt nanocatalyst decoration for selectivity control in CMOS-integrated SnO <subscript>2</subscript> thin film gas sensors.

Sosada-Ludwikowska, F ; Reiner, L ; et al.

In: Nanoscale advances, Jg. 6 (2024-01-15), Heft 4, S. 1127-1134

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Efficient second-order nonlinear response and upconversion emission from a wide-bandgap quasi-1D lead bromide perovskiteElectronic supplementary information (ESI) available: Thermal gravimetric analysis (TGA) plots; simulated XRD patterns of PEA2PbBr4 crystals; comparison of the measured XRD diagram over three months; the power-dependent SHG spectra; SHG intensity as a function of the excitation polarization angle; power-dependent TPPL; normalized spectral- and power-dependent PL images; Gaussian fitted full-width at half maximum (FWHM) as a function of power density; wavelength-dependent TPPL; excitation power-dependent PL dynamics; photoluminescence image with wide-field UV (330–380 nm) LED illumination; photograph of the single crystal captured using a monochrome CMOS camera. See DOI: https://doi.org/10.1039/d2tc02917k

Zhou, Yunke ; Li, Wanning ; et al.

In: Journal of materials chemistry.C, Jg. 10 (2022), Heft 41, S. 15424-15430

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Reliable metal–graphene contact formation process flows in a CMOS-compatible environment

Elviretti, M. ; Lisker, M. ; et al.

In: Nanoscale advances, Jg. 4 (2022), Heft 20, S. 4373-4380

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Multi-parametric functional imaging of cell cultures and tissues with a CMOS microelectrode arrayElectronic supplementary information (ESI) available. See DOI: 10.1039/d1lc00878a

Abbott, Jeffrey ; Mukherjee, Avik ; et al.

In: Lab on a chip, Jg. 22 (2022), Heft 7, S. 1286-1296

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Ternary 14-electron XB2Be2 (X = Si, Ge, Sn, Pb) clusters: a planar tetracoordinate silicon (ptSi) system and its ptGe/Sn/Pb congenersElectronic supplementary information (ESI) available: Cartesian coordinates for GM clusters XB2Be2 (X = Si/Ge/Sn/Pb) (1–4) at the PBE0-D3/def2-QZVP level (Table S1); orbital composition analyses for SiB2Be2 (1) and PbB2Be2 (4) clusters (Tables S2 and S3); top lowest-lying structures and their relative energies (Fig. S1); Wiberg bond indices (WBIs) and natural atomic charges for clusters 1–4 (Fig. S2); comparative root-mean-square deviations (RMSDs) of cluster 1 during the BOMD simulations at room temperature (298 K) and at a higher temperature (1200 K) (Fig. S3); and canonical molecular orbitals (CMOs), AdNDP bonding scheme, as well as electron localization function (ELF) analysis of cluster 4 (Fig. S4 and S5). See DOI: 10.1039/d1cp05226h

Zhao, Lian-Qing ; Guo, Jin-Chang ; et al.

In: Physical chemistry chemical physics, Jg. 24 (2022), Heft 11, S. 7068-7076

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SE-ECL on CMOS: a miniaturized electrochemiluminescence biosensor

Abbasi, Reza ; Liu, Juanjuan ; et al.

In: Lab on a chip, Jg. 22 (2022), Heft 5, S. 994-1005

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On the nature of bonding in a new boronyl species Zn2(BO)2: a linear four-center two-electron σ bondElectronic supplementary information (ESI) available: Typical low-lying isomers of Zn2(BO)2 (Fig. S1); representation of the key molecular orbitals (CMOs) of OBZnZnBO (D∞h, 1∑g), D∞h HZnZnH, and D∞h NCZnZnCN from DFT calculations (Fig. S2); AdNDP bonding pattern for the OBZnZnBO (D∞h, 1∑g) cluster based on the 2c–2e Zn–Zn bond (Fig. S3); the calculated bond length of compounds containing the Zn–Zn bond using different basis sets with the B3LYP method (Table S1); the calculated frequencies, intensities and bond lengths for zinc complexes with boronyl as ligands, and D∞h HZnZnH and NCZnZnCN clusters (Table S2). See DOI: 10.1039/d1cp03920b

Li, Da-Zhi ; Zhang, Li-Juan ; et al.

In: Physical chemistry chemical physics, Jg. 24 (2022), Heft 1, S. 287-294

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Driving electrochemical reactions at the microscale using CMOS microelectrode arrays.

Duru, J ; Rüfenacht, A ; et al.

In: Lab on a chip, Jg. 23 (2023-11-21), Heft 23, S. 5047-5058

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Unexpected phosphorus doping routine of planar silicon nanowires for integrating CMOS logicsElectronic supplementary information (ESI) available: Fig. S1a–b and S2a–b. See DOI: 10.1039/d1nr03014k

Sun, Ying ; Qian, Wentao ; et al.

In: Nanoscale, Jg. 13 (2021), Heft 35, S. 15031-15037

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Printed solid state electrolyte carbon nanotube thin film transistors for sub-1 V fully printed flexible CMOS invertersElectronic supplementary information (ESI) available: Fig. S1–S3 and Table S1 as described in the text. Fig. S1: The optical image of an ionic c-PVP layer deposited by inkjet printing formulated with (a) PGMEA solvent, and with (b) a co-solvent system (PGMEA : TEGME) = (1 : 1), contact angles for water measured on the planarization layer (c) without UV-zone and (d) with UV-zone for 30 s. Fig. S2: Transfer characteristics at Vds = −0.2 V of fully printed c-PVP based SWCNT-TFTs for the different UV-ozone treatment durations prior to printing the SWCNT inks. Fig. S3: The areal capacitance of a the ll printed MIM structure. Ag/IL-c-PVP/Ag with the different weight percentages of ILs in the dielectric layers: (a) 0%, (b) 5%, (c) 15% and (d) 25%. Table S1: The areal capacitance values and the extracted dielectric constants of c-PVP dielectric layers with different concentrations of ILs. See DOI: 10.1039/d1tc00357g

Gao, Tianqi ; Deng, Jie ; et al.

In: Journal of materials chemistry.C, Jg. 9 (2021), Heft 21, S. 6852-6862

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Boron-based Be2B5+/0/− alloy clusters: inverse sandwiches with pentagonal boron ring and reduction-induced structural transformation to molecular wheel structureElectronic supplementary information (ESI) available: Cartesian coordinates for the GM structures of Be2B5+/0/− (1–3) clusters at the PBE0/6-311+G* level (Table S1); alternative optimized low-lying structures of Be2B5+/0/− clusters along with their relative energies at the PBE0 and single-point CCSD(T) levels (Fig. S1–S3); calculated Wiberg bond indices (WBIs) and natural atomic charges of clusters 1–3 from natural bond orbital (NBO) analyses (Fig. S4); and the CMO pictures for Be2B5 (2) clusters (Fig. S5). See DOI: 10.1039/d0nj05961g

Han, Li-Hua ; Wang, Ying-Jin ; et al.

In: New journal of chemistry, Jg. 45 (2021), Heft 10, S. 4675-4682

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A designer 32-electron superatomic CBe8H12 cluster: core–shell geometry, octacoordinate carbon, and cubic aromaticityElectronic supplementary information (ESI) available: Cartesian coordinates for optimized structures of CBe8H12 (1), Be8H122+ (2), and NBe8H12+ (3) clusters and their three lowest-lying isomers (nB–nD) at the PBE0-D3/def2-TZVPP level (Table S1); calculated WBIs, natural atomic charges, and HOMO–LUMO energy gaps of 1–3 at PBE0-D3/def2-TZVPP, as well as their NICSs (Table S2); composition analysis for occupied CMOs of 1 and 2 (Tables S3 and S4); optimized GM structures of cubic clusters 1–3 at PBE0-D3/def2-TZVPP along with their lowest-lying isomers nB–nD (Fig. S1); WBIs and natural atomic charges of cluster 1 at PBE0-D3/def2-TZVPP (Fig. S2); RMSDs of cluster 1 during the BOMD simulations at selected temperatures (Fig. S3); pictures of CMOs for cluster 2 (Fig. S4); and optimized quasi-linear chain nanostructures of clusters (CBe8H12)2, (CBe8H12)3, and (CBe8H12)4 at PBE0/def2-TZVP (Fig. S5). See DOI: 10.1039/d0nj00778a

Guo, Jin-Chang ; Feng, Lin-Yan ; et al.

In: New journal of chemistry, Jg. 44 (2020), Heft 18, S. 7286-7292

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Superhydrophobic bowl-like SERS substrates patterned from CMOS sensors for extracellular vesicle characterization

Suarasan, Sorina ; Liu, Juanjuan ; et al.

In: Journal of materials chemistry.B, Jg. 8 (2020), Heft 38, S. 8845-8852

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Planar tetracoordinate carbon molecules with 14 valence electrons: examples of CBe4Mnn−2 (M = Li, Au; n = 1–3) clustersElectronic supplementary information (ESI) available: Cartesian coordinates for optimized GM clusters 1–6 of CBe4Mnn−2 (M = Li, Au; n = 1–3) and their three lowest-lying isomers (nB–nD) at PBE0-D3/def2-TZVPP (Table S1); orbital composition analysis for CBe4Li− (1) and CBe4Au− (4), along with the LUMOs of CBe4M3+ (M = Li, Na, K, Cu, Ag, Au) (Tables S2–S4); optimized geometries of GM clusters 1–6 and their lowest-lying isomers nB–nD (Fig. S1); natural atomic charges of 1–6 (Fig. S2); root-mean-square deviations of 1–6 during their molecular dynamics simulations (Fig. S3); CMO pictures of 1/4 (Fig. S4); optimized tetrahedral carbon (thC) structures of 1′/3′/4′ at the PBE0-D3/def2-TZVPP level (Fig. S5); comparison of Wiberg bond indices (WBIs) and natural atomic charges of GM ptC cluster 3 and thC isomer 3′ (Fig. S6); and calculated nucleus-independent chemical shifts for 1–6 (Fig. S7). See DOI: 10.1039/d0nj03944f

Guo, Jin-Chang ; Feng, Lin-Yan ; et al.

In: New journal of chemistry, Jg. 44 (2020), Heft 42, S. 18293-18302

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