Development of Cu(In,Ga)Se2 superstrate devices with alternative buffer layers.
In: Solar Energy Materials & Solar Cells, Jg. 157 (2016-12-01), S. 85-92
academicJournal
Zugriff:
Superstrate Cu(In,Ga)Se 2 (CIGS) solar cells are prepared in the structure SLG/TCO/buffer/CIGS/Au with CIGS deposited onto the buffer layer by a single stage co-evaporation process. Three buffer materials – CdS deposited by chemical surface deposition, ZnSe and ZnO by RF magnetron sputtering – are tested in the superstrate structure. The best cell achieves 8.6% efficiency with the ZnO buffer after light soaking and forward bias treatments. The efficiency of devices with CdS or ZnSe buffers are less than 4%. The junction formation between the absorber and buffer layers are investigated by x-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy. For CdS/CIGS and ZnSe/CIGS superstrate devices extensive inter-diffusion between the absorber and buffer layer under CIGS growth condition is the critical problem. For ZnO/CIGS superstrate cells Ga x O y formation at the junction interface and unfavorable conduction band alignment are the main factors that limit the device performance. [ABSTRACT FROM AUTHOR]
Titel: |
Development of Cu(In,Ga)Se2 superstrate devices with alternative buffer layers.
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Autor/in / Beteiligte Person: | Xin, Peipei ; Larsen, Jes K. ; Deng, Fei ; Shafarman, William N. |
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Zeitschrift: | Solar Energy Materials & Solar Cells, Jg. 157 (2016-12-01), S. 85-92 |
Veröffentlichung: | 2016 |
Medientyp: | academicJournal |
ISSN: | 0927-0248 (print) |
DOI: | 10.1016/j.solmat.2016.05.018 |
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