Low-temperature preparation of boron-doped nanocrystalline SiC:H films using mercury-sensitized photo-CVD technique
In: Solar Energy Materials & Solar Cells, Jg. 81 (2004-03-01), Heft 4, S. 485-493
academicJournal
Zugriff:
We investigated the dependence of hydrogenated boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) film characteristics against the substrate temperature (Tsub) by the transmission electron micrograph, Raman spectrum, and dark conductivity measurements. High quality of nanocrystalline growth at the low temperature of 120°C shows that the mercury-sensitized photo-assisted chemical vapor deposition (photo-CVD) technique is promising for a low-temperature fabrication of thin film solar cells onto flexible plastic substrates. [Copyright &y& Elsevier]
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Low-temperature preparation of boron-doped nanocrystalline SiC:H films using mercury-sensitized photo-CVD technique
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| Autor/in / Beteiligte Person: | Myong, Seung Yeop ; Kim, Tae Hun ; Lim, Koeng Su ; Kim, Ki Hwan ; Ahn, Byung Tae ; Miyajima, Shinsuke ; Konagai, Makoto |
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| Zeitschrift: | Solar Energy Materials & Solar Cells, Jg. 81 (2004-03-01), Heft 4, S. 485-493 |
| Veröffentlichung: | 2004 |
| Medientyp: | academicJournal |
| ISSN: | 0927-0248 (print) |
| DOI: | 10.1016/j.solmat.2003.12.002 |
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