An accurate one-diode model suited to represent the current-voltage characteristics of crystalline and thin-film photovoltaic modules.

In this paper a new one-diode model, conceived in order to be used to represent the current-voltage curves of both crystalline and thin-film photovoltaic modules, is presented. The model parameters are calculated from the information contained in the datasheets issued by manufactures by means of simple iterative procedures that do not require the assumption of simplifying hypotheses. Some innovative relations describing the dependence of the parameters from the solar irradiance and cell temperature are adopted in order to permit the model to reliably simulate the electrical behaviour of photovoltaic devices operating in real conditions. The ability of the model to calculate the current-voltage characteristics issued by manufacturers for values of the solar irradiance and cell temperature also far from the standard rating conditions was verified for various photovoltaic technologies, such as monocrystalline, polycrystalline, amorphous silicon, CIS, CIGS and tandem junction photovoltaic modules. The percentage ratio of the mean absolute difference of current to the rated current at the maximum power point ranges from 0.071% to 1.807%; the analogous ratio of power varies between 0.056% and 1.720%. A comparison with the results obtained with other recognised two-diode models is also presented. • A procedure to get an improved one-diode model for PV devices is presented. • The model is suited to simulate both crystalline and thin-film PV devices. • The procedure is used to depict the I-V curves of seven different PV panels typologies. • The procedure is checked by comparison with other recognised two-diode models. [ABSTRACT FROM AUTHOR]