Novel Passivation and Gettering Strategy for Silicon Wafer by Al<subscript>2</subscript>O<subscript>3</subscript>/n‐poly‐Si/SiO<subscript>x</subscript> Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells.
In: Energy Technology, Jg. 12 (2024-04-01), Heft 4, S. 1-9
Online
academicJournal
Zugriff:
This study focuses on the enhanced passivation and gettering of boron‐doped p‐type solar grade silicon wafers by incorporating carrier‐selective and passivating tunnel oxide contact (TOPCon). A symmetrical stack of aluminum oxide (Al2O3)/p‐doped n‐type polysilicon (n‐poly‐Si)/ ultrathin silicon oxide (SiOx) in conjunction with long cycles of forming gas annealing is used for enhancing the silicon wafer quality with a novel approach. Multilayer of n‐poly‐Si/SiOx on p‐type crystalline silicon wafer exhibits an implied open‐circuit voltage (iVoc) of 726 mV, effective carrier lifetime (τeff) of 857 μs, and a low recombination current density (Jo) of 1.9 fA cm−2 when subjected to a postdeposition annealing (PDA) of phosphorus‐doped hydrogenated amorphous silicon (n‐a‐Si:H) at 820 °C. To boost passivation and gettering quality, 10 nm‐thick Al2O3 layers on both sides of n‐poly‐Si/SiOx samples are added. This leads to improved τeff (962 μs), reduced Jo (1.1 fA cm−2), and higher iVoc (728 mV). Herein, a thinner 50 nm n‐poly‐Si layer for improved properties is applied. The experiments show improved passivation and gettering. A Quokka‐3 simulation examines the potential of high‐efficiency p‐type TOPCon cells. A novel solar‐grade p‐type wafer quality enhancement approach is introduced, amalgamated with Quokka‐3 results, which could be a milestone in high‐efficiency p‐type TOPCon solar cell production. [ABSTRACT FROM AUTHOR]
Titel: |
Novel Passivation and Gettering Strategy for Silicon Wafer by Al<subscript>2</subscript>O<subscript>3</subscript>/n‐poly‐Si/SiO<subscript>x</subscript> Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells.
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Autor/in / Beteiligte Person: | Khokhar, Muhammad Quddamah ; Yousuf, Hasnain ; Chu, Mengmeng ; Kim, Youngkuk ; Jeon, Minsung ; Dhungel, Suresh Kumar ; Yi, Junsin |
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Zeitschrift: | Energy Technology, Jg. 12 (2024-04-01), Heft 4, S. 1-9 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 2194-4288 (print) |
DOI: | 10.1002/ente.202301031 |
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