Investigation of various surface passivation schemes for silicon solar cells
In: Solar Energy Materials & Solar Cells, Jg. 90 (2006-01-06), Heft 1, S. 82-92
academicJournal
Zugriff:
Abstract: In this work, we have investigated three different surface passivation technologies: classical thermal oxidation (CTO), rapid thermal oxidation (RTO) and silicon nitride by plasma enhanced chemical vapor deposition (PECVD). Eight different passivation properties including SiO2/SiN x stacks on phosphorus diffused (100 and 40Ω/Sq) and non-diffused 1Ωcm FZ silicon were compared. Both types of SiO2 layers, CTO and RTO, yield a higher effective lifetime on the emitter surface than on the non-diffused surface. For the SiN x layers the situation is reverted. On the other hand, with SiO2/SiN x stacks high lifetimes are obtained not only non-diffused surface but also on the diffused surface. Thus, we have chosen the RTO/SiN x stack layers as front and rear surface passivation in solar cells, which passivate relatively good on the surface and has very low-weighted reflection. On planar cells passivated with RTO/SiN x a very high V oc of 675.6mV and a J sc of 35.1mA/cm2 was achieved. Compared to a planar cell using CTO the efficiency of RTO/SiN x cell is 0.8% higher (4.5% relative). It can be concluded that the RTO/SiN x layers are the optimal passivation for the front and rear surface. On the other hand, for textured cells, the J sc and FF of RTO/SiN x cells are lower than those of CTO cells. The main reasons of these J sc and FF losses were also discussed systematically. [Copyright &y& Elsevier]
Titel: |
Investigation of various surface passivation schemes for silicon solar cells
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Autor/in / Beteiligte Person: | Lee, Ji Youn ; Glunz, S.W. |
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Zeitschrift: | Solar Energy Materials & Solar Cells, Jg. 90 (2006-01-06), Heft 1, S. 82-92 |
Veröffentlichung: | 2006 |
Medientyp: | academicJournal |
ISSN: | 0927-0248 (print) |
DOI: | 10.1016/j.solmat.2005.02.007 |
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