Deep defect determination by the constant photocurrent method (CPM) in annealed or light soaked amorphous hydrogenated silic n (a-Si:H)
In: Solar Energy Materials & Solar Cells, Jg. 34 (1994-09-01), Heft 1-4, S. 533-533
academicJournal
Zugriff:
Titel: |
Deep defect determination by the constant photocurrent method (CPM) in annealed or light soaked amorphous hydrogenated silic n (a-Si:H)
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Autor/in / Beteiligte Person: | Goetz, M. ; Mettler, A. ; Wyrsch, N. ; Shah, A. |
Link: | |
Zeitschrift: | Solar Energy Materials & Solar Cells, Jg. 34 (1994-09-01), Heft 1-4, S. 533-533 |
Veröffentlichung: | 1994 |
Medientyp: | academicJournal |
ISSN: | 0927-0248 (print) |
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