Depth Profile of Impurity Phase in Wide-Bandgap Cu(In1−x,Gax)Se2 Film Fabricated by Three-Stage Process.
In: Journal of Electronic Materials, Jg. 47 (2018-09-01), Heft 9, S. 4944-4949
Online
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Zugriff:
Titel: |
Depth Profile of Impurity Phase in Wide-Bandgap Cu(In1−x,Gax)Se2 Film Fabricated by Three-Stage Process.
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Autor/in / Beteiligte Person: | Wang, Shenghao ; Nazuka, Takehiro ; Hagiya, Hideki ; Takabayashi, Yutaro ; Ishizuka, Shogo ; Shibata, Hajime ; Niki, Shigeru ; Islam, Muhammad M. ; Akimoto, Katsuhiro ; Sakurai, Takeaki |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 47 (2018-09-01), Heft 9, S. 4944-4949 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) |
DOI: | 10.1007/s11664-018-6120-1 |
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