Analysis of a Direct-Bandgap GeSn-Based MQW Transistor Laser for Mid-Infrared Applications.
In: Journal of Electronic Materials, Jg. 48 (2019-10-01), Heft 10, S. 6335-6346
Online
academicJournal
Zugriff:
Titel: |
Analysis of a Direct-Bandgap GeSn-Based MQW Transistor Laser for Mid-Infrared Applications.
|
---|---|
Autor/in / Beteiligte Person: | Basu, Rikmantra ; Kaur, Jaspinder ; Sharma, Ajay K. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 48 (2019-10-01), Heft 10, S. 6335-6346 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) |
DOI: | 10.1007/s11664-019-07418-w |
Sonstiges: |
|