Fabrication, Characterization and Analysis of Concentrically Strained Silicon Nanowires With Extremely-High Hole Mobility.
In: IEEE Journal of Quantum Electronics, Jg. 56 (2020-12-01), Heft 6, S. 1-15
Online
academicJournal
Zugriff:
Titel: |
Fabrication, Characterization and Analysis of Concentrically Strained Silicon Nanowires With Extremely-High Hole Mobility.
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Autor/in / Beteiligte Person: | Sharma, Ashwani K. ; Huang, Danhong ; Vaughan, Erin ; Logofatu, Petre C. ; Rotter, Thomas J. ; Naudeau, Madeleine L. |
Link: | |
Zeitschrift: | IEEE Journal of Quantum Electronics, Jg. 56 (2020-12-01), Heft 6, S. 1-15 |
Veröffentlichung: | 2020 |
Medientyp: | academicJournal |
ISSN: | 0018-9197 (print) |
DOI: | 10.1109/JQE.2020.3022380 |
Sonstiges: |
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