Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si(100) substrate by ion-cutting technique.
In: Semiconductor Science & Technology, Jg. 35 (2020-12-01), Heft 12, S. 1-8
Online
academicJournal
Zugriff:
Titel: |
Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si(100) substrate by ion-cutting technique.
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Autor/in / Beteiligte Person: | Shi, Hangning ; Huang, Kai ; Mu, Fengwen ; You, Tiangui ; Ren, Qinghua ; Lin, Jiajie ; Xu, Wenhui ; Jin, Tingting ; Huang, Hao ; Yi, Ailun ; Zhang, Shibin ; Li, Zhongxu ; Zhou, Min ; Wang, Jianfeng ; Xu, Ke ; Ou, Xin |
Link: | |
Zeitschrift: | Semiconductor Science & Technology, Jg. 35 (2020-12-01), Heft 12, S. 1-8 |
Veröffentlichung: | 2020 |
Medientyp: | academicJournal |
ISSN: | 0268-1242 (print) |
DOI: | 10.1088/1361-6641/abb073 |
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