Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs.
In: IEEE Electron Device Letters, Jg. 43 (2022-03-01), Heft 3, S. 490-493
Online
academicJournal
Zugriff:
Titel: |
Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs.
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Autor/in / Beteiligte Person: | Lin, Qing ; Pitner, Gregory ; Gilardi, Carlo ; Su, Sheng-Kai ; Zhang, Zichen ; Chen, Edward ; Bandaru, Prabhakar ; Kummel, Andrew ; Wang, Han ; Passlack, Matthias ; Mitra, Subhasish ; Wong, H.-S. Philip |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 43 (2022-03-01), Heft 3, S. 490-493 |
Veröffentlichung: | 2022 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) |
DOI: | 10.1109/LED.2022.3141692 |
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