High-Performance Field-Effect Transistor Fabricated on CVD-Grown MoS2 Monolayers with Indium Contacts.
In: Journal of Electronic Materials, Jg. 52 (2023-11-01), Heft 11, S. 7157-7163
Online
academicJournal
Zugriff:
Titel: |
High-Performance Field-Effect Transistor Fabricated on CVD-Grown MoS2 Monolayers with Indium Contacts.
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Autor/in / Beteiligte Person: | Mustafa, Hina ; Khan, Jahangir ; Sattar, Abdul ; Irfan, Muhammad ; Gul, Sania ; Zalfiqar, Irsa |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 52 (2023-11-01), Heft 11, S. 7157-7163 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) |
DOI: | 10.1007/s11664-023-10625-1 |
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