Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming.
In: Applied Physics Letters, Jg. 123 (2023-10-16), Heft 16, S. 1-7
Online
academicJournal
Zugriff:
Titel: |
Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming.
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Autor/in / Beteiligte Person: | Mouny, Pierre-Antoine ; Dawant, Raphaël ; Galaup, Bastien ; Ecoffey, Serge ; Pioro-Ladrière, Michel ; Beilliard, Yann ; Drouin, Dominique |
Link: | |
Zeitschrift: | Applied Physics Letters, Jg. 123 (2023-10-16), Heft 16, S. 1-7 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/5.0170058 |
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