Fast low bias pulsed DC transport measurements for the investigation of low temperature transport effects in semiconductor devices.
In: Journal of Applied Physics, Jg. 134 (2023-11-07), Heft 17, S. 1-10
Online
academicJournal
Zugriff:
Titel: |
Fast low bias pulsed DC transport measurements for the investigation of low temperature transport effects in semiconductor devices.
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Autor/in / Beteiligte Person: | Fuchs, C. ; Hofer, M. ; Fürst, L. ; Shamim, S. ; Kießling, T. ; Buhmann, H. ; Molenkamp, L. W. |
Link: | |
Zeitschrift: | Journal of Applied Physics, Jg. 134 (2023-11-07), Heft 17, S. 1-10 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0021-8979 (print) |
DOI: | 10.1063/5.0170478 |
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