Hot-carrier induced degradation of Ge/STI interfaces in Ge-on-Si junction devices.
In: Solid-State Electronics, Jg. 214 (2024-04-01), S. N.PAG
academicJournal
Zugriff:
Titel: |
Hot-carrier induced degradation of Ge/STI interfaces in Ge-on-Si junction devices.
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Autor/in / Beteiligte Person: | Musibau, Solomon ; Franco, Jacopo ; Tsiara, Artemisia ; De Wolf, Ingrid ; Croes, Kristof |
Link: | |
Zeitschrift: | Solid-State Electronics, Jg. 214 (2024-04-01), S. N.PAG |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 0038-1101 (print) |
DOI: | 10.1016/j.sse.2024.108867 |
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