Compressively strained epitaxial Ge layers for quantum computing applications.
In: Materials Science in Semiconductor Processing, Jg. 174 (2024-05-01), S. N.PAG
academicJournal
Zugriff:
Titel: |
Compressively strained epitaxial Ge layers for quantum computing applications.
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Autor/in / Beteiligte Person: | Shimura, Yosuke ; Godfrin, Clement ; Hikavyy, Andriy ; Li, Roy ; Aguilera, Juan ; Katsaros, Georgios ; Favia, Paola ; Han, Han ; Wan, Danny ; De Greve, Kristiaan ; Loo, Roger |
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Zeitschrift: | Materials Science in Semiconductor Processing, Jg. 174 (2024-05-01), S. N.PAG |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 1369-8001 (print) |
DOI: | 10.1016/j.mssp.2024.108231 |
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