The role of excess arsenic in interface mixing in low-temperature-grown AlAs/GaAs superlattices.
In: Applied Physics Letters, Jg. 67 (1995-08-28), Heft 9, S. 1244-1246
Online
academicJournal
Zugriff:
Titel: |
The role of excess arsenic in interface mixing in low-temperature-grown AlAs/GaAs superlattices.
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Autor/in / Beteiligte Person: | Lahiri, I. ; Nolte, D.D. |
Link: | |
Zeitschrift: | Applied Physics Letters, Jg. 67 (1995-08-28), Heft 9, S. 1244-1246 |
Veröffentlichung: | 1995 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.114385 |
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