The cryogenic behaviour of metal-oxide-semiconductor transistors fabricated in high-resistivity silicon substrates.
In: Semiconductor Science & Technology, Jg. 9 (1994-09-01), S. 1679-1685
Online
academicJournal
Zugriff:
Titel: |
The cryogenic behaviour of metal-oxide-semiconductor transistors fabricated in high-resistivity silicon substrates.
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Autor/in / Beteiligte Person: | Simoen, E. ; Vanstraelen, G. ; Claeys, C. |
Link: | |
Zeitschrift: | Semiconductor Science & Technology, Jg. 9 (1994-09-01), S. 1679-1685 |
Veröffentlichung: | 1994 |
Medientyp: | academicJournal |
ISSN: | 0268-1242 (print) |
DOI: | 10.1088/0268-1242/9/9/017 |
Sonstiges: |
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