GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer.
In: Applied Physics Letters, Jg. 71 (1997-12-15), S. 3569-3571
Online
academicJournal
Zugriff:
Titel: |
GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer.
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Autor/in / Beteiligte Person: | Kobayashi, N. P. ; Kobayashi, J. T. ; Dapkus, P. D. |
Link: | |
Zeitschrift: | Applied Physics Letters, Jg. 71 (1997-12-15), S. 3569-3571 |
Veröffentlichung: | 1997 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.120394 |
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