GaN homoepitaxial layers grown by metalorganic chemical vapor deposition.
In: Applied Physics Letters, Jg. 75 (1999-08-30), Heft 9, S. 1276-1278
Online
academicJournal
Zugriff:
Titel: |
GaN homoepitaxial layers grown by metalorganic chemical vapor deposition.
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Autor/in / Beteiligte Person: | Leszczynski, M. ; Beaumont, B. ; Frayssinet, E. |
Link: | |
Zeitschrift: | Applied Physics Letters, Jg. 75 (1999-08-30), Heft 9, S. 1276-1278 |
Veröffentlichung: | 1999 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.124666 |
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