Anomalous low-voltage tunneling characteristics of ultrathin gate oxide (∼2 nm) after high-field stress.
In: Journal of Applied Physics, Jg. 89 (2001-05-15), Heft 10, S. 5497-5501
Online
academicJournal
Zugriff:
Titel: |
Anomalous low-voltage tunneling characteristics of ultrathin gate oxide (∼2 nm) after high-field stress.
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Autor/in / Beteiligte Person: | Huang, Chia-Hong ; Hwu, Jenn-Gwo |
Link: | |
Zeitschrift: | Journal of Applied Physics, Jg. 89 (2001-05-15), Heft 10, S. 5497-5501 |
Veröffentlichung: | 2001 |
Medientyp: | academicJournal |
ISSN: | 0021-8979 (print) |
DOI: | 10.1063/1.1364654 |
Sonstiges: |
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