Characterization of Thermal and Electrical Stability of MOCVD HfO2-HfSiO4 Dielectric Layers with Polysilicon Electrodes for Advanced CMOS Technologies.
In: Journal of the Electrochemical Society, Jg. 151 (2004-01-12), Heft 12, S. G870- (8S.)
academicJournal
Zugriff:
Titel: |
Characterization of Thermal and Electrical Stability of MOCVD HfO2-HfSiO4 Dielectric Layers with Polysilicon Electrodes for Advanced CMOS Technologies.
|
---|---|
Autor/in / Beteiligte Person: | Rittersma, Z. M. ; Loo, J. J. P. G. ; Ponomarev, Y. V. |
Zeitschrift: | Journal of the Electrochemical Society, Jg. 151 (2004-01-12), Heft 12, S. G870- (8S.) |
Veröffentlichung: | 2004 |
Medientyp: | academicJournal |
ISSN: | 0013-4651 (print) |
DOI: | 10.1149/1.1814452 |
Sonstiges: |
|