A Functional 41-Stage Ring Oscillator Using Scaled FinFET Devices With 25-nm Gate Lengths and 10-nm Fin Widths Applicable for the 45-nm CMOS Node.
In: IEEE Electron Device Letters, Jg. 25 (2004-08-01), Heft 8, S. 568-570
Online
academicJournal
Zugriff:
Titel: |
A Functional 41-Stage Ring Oscillator Using Scaled FinFET Devices With 25-nm Gate Lengths and 10-nm Fin Widths Applicable for the 45-nm CMOS Node.
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Autor/in / Beteiligte Person: | Collaert, N. ; Dixit, A. ; Goodwin, M. |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 25 (2004-08-01), Heft 8, S. 568-570 |
Veröffentlichung: | 2004 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) |
DOI: | 10.1109/LED.2004.831585 |
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