In Situ Surface Passivation and CMOS-Compatible Palladium-Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs.
In: IEEE Electron Device Letters, Jg. 29 (2008-06-01), Heft 6, S. 553-556
Online
academicJournal
Zugriff:
Titel: |
In Situ Surface Passivation and CMOS-Compatible Palladium-Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs.
|
---|---|
Autor/in / Beteiligte Person: | Chin, Hock-Chun ; Zhu, Ming ; Tung, Chih-Hang |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 29 (2008-06-01), Heft 6, S. 553-556 |
Veröffentlichung: | 2008 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) |
DOI: | 10.1109/LED.2008.921393 |
Sonstiges: |
|