Influence of RF Bias on Hydrogenated Amorphous Silicon by High-Density Plasma Chemical Vapor Deposition.
In: Journal of the Electrochemical Society, Jg. 154 (2007-05-01), Heft 5, S. G122- (5S.)
academicJournal
Zugriff:
Titel: |
Influence of RF Bias on Hydrogenated Amorphous Silicon by High-Density Plasma Chemical Vapor Deposition.
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Autor/in / Beteiligte Person: | Hsiao, Wen-Chu ; Liu, Chuan-Pu ; Wang, Ying-Lang |
Zeitschrift: | Journal of the Electrochemical Society, Jg. 154 (2007-05-01), Heft 5, S. G122- (5S.) |
Veröffentlichung: | 2007 |
Medientyp: | academicJournal |
ISSN: | 0013-4651 (print) |
DOI: | 10.1149/1.2713723 |
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