A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)
In: Applied Physics Letters, Jg. 94 (2009-03-09), Heft 10, S. 102115-102115
Online
academicJournal
Zugriff:
Titel: |
A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)
|
---|---|
Autor/in / Beteiligte Person: | Wang, G. ; Loo, R. ; Simoen, E. |
Link: | |
Zeitschrift: | Applied Physics Letters, Jg. 94 (2009-03-09), Heft 10, S. 102115-102115 |
Veröffentlichung: | 2009 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.3097245 |
Sonstiges: |
|