Thickness-dependent electronic structure in ultrathin LaNiO<subscript>3</subscript> films under tensile strain.
In: Physical Review B, Jg. 93 (2016-01-15), Heft 3, S. 35141-1- (7S.)
academicJournal
Zugriff:
We investigated electronic-structure changes of tensile-strained ultrathin LaNiO3 (LNO) films from ten to one unit cells (UCs) using angle-resolved photoemission spectroscopy (ARPES). We found that there is a critical thickness tc between four and three UCs below which Ni eg electrons are confined in two-dimensional space. Furthermore, the Fermi surfaces (FSs) of LNO films below tc consist of two orthogonal pairs of one-dimensional (1D) straight parallel lines. Such a feature is not accidental as observed in constant-energy surfaces at all binding energies, which is not explained by first-principles calculations or the dynamical mean-field theory. The ARPES spectra also show anomalous spectral behaviors, such as no quasiparticle peak at the Fermi momentum but fast band dispersion comparable to the bare-band one, which is typical in a 1D system. As its possible origin, we propose 1D FS nesting, which also accounts for FS superstructures observed in ARPES. [ABSTRACT FROM AUTHOR]
Titel: |
Thickness-dependent electronic structure in ultrathin LaNiO<subscript>3</subscript> films under tensile strain.
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Autor/in / Beteiligte Person: | Hyang Keun Yoo ; Seung Ill Hyun ; Young Jun Chang ; Moreschini, Luca ; Chang Hee Sohn ; Kim, Hyeong-Do ; Bostwick, Aaron ; Rotenberg, Eli ; Ji Hoon Shim ; Tae Won Noh |
Zeitschrift: | Physical Review B, Jg. 93 (2016-01-15), Heft 3, S. 35141-1- (7S.) |
Veröffentlichung: | 2016 |
Medientyp: | academicJournal |
ISSN: | 2469-9950 (print) |
DOI: | 10.1103/PhysRevB.93.035141 |
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