Photoluminescence of SiV centers in CVD diamond particles with specific crystallographic planes.
In: Chinese Physics B, Jg. 28 (2019), Heft 1, S. 1-1
academicJournal
Zugriff:
We prepared the isolated micrometer-sized diamond particles without seeding on the substrate in hot filament chemical vapor deposition. The diamond particles with specific crystallographic planes and strong silicon-vacancy (SiV) photoluminescence (PL) have been prepared by adjusting the growth pressure. As the growth pressure increases from 2.5 to 3.5 kPa, the diamond particles transit from composite planes of {100} and {111} to only smooth {111} planes. The {111}-faceted diamond particles present better crystal quality and stronger normalized intensity of SiV PL with a narrower bandwidth of 5 nm. Raman depth profiles show that the SiV centers are more likely to be formed on the near-surface areas of the diamond particles, which have poorer crystal quality and greater lattice stress than the inner areas. Complex lattice stress environment in the near-surface areas broadens the bandwidth of SiV PL peak. These results provide a feasible method to prepare diamond particles with specific crystallographic planes and stronger SiV PL. [ABSTRACT FROM AUTHOR]
Titel: |
Photoluminescence of SiV centers in CVD diamond particles with specific crystallographic planes.
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Autor/in / Beteiligte Person: | Mei, Ying-Shuang ; Chen, Cheng-Ke ; Jiang, Mei-Yan ; Li, Xiao ; Ruan, Yin-Lan ; Hu, Xiao-Jun |
Zeitschrift: | Chinese Physics B, Jg. 28 (2019), Heft 1, S. 1-1 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 1674-1056 (print) |
DOI: | 10.1088/1674-1056/28/1/016101 |
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