Mobility improvement in CVD graphene by using local metal side-gate.
In: Semiconductor Science & Technology, Jg. 35 (2020-04-01), Heft 4, S. 1-9
Online
academicJournal
Zugriff:
It has been anticipated that using a side-gate helps in the improvement of mobility over more common top-gate or back-gate graphene transistors. In this work, we presented a method of quantifying the mobility improvement. Transistors are fabricated using chemical vapour deposition graphene on SiO2/Si substrate. Characteristics of two graphene transistors with slightly different geometry are presented. The transistors are fabricated with both, a back-gate and a side-gate. Using results from experiment and technology computer-aided design simulations, field effect mobility of majority carriers (holes) is calculated by two methods. It has been observed that switching from back-gate to side-gate operation on the same transistor results in a mobility improvement of at least 1.64 times. Simulation results presented in this work exhibit a non-perpendicular direction of majority side-gate electric field induced to the two-dimensional graphene channel. This could be one of the reasons behind the mobility improvement. Because in both cases (back-gate and side-gate) the graphene channel is in contact with ambient air on top and SiO2 substrate on bottom. [ABSTRACT FROM AUTHOR]
Titel: |
Mobility improvement in CVD graphene by using local metal side-gate.
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Autor/in / Beteiligte Person: | Acharya, Sanchar ; Babu, Anakha V ; Khadar, R Abdul ; Kottantharayil, Anil |
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Zeitschrift: | Semiconductor Science & Technology, Jg. 35 (2020-04-01), Heft 4, S. 1-9 |
Veröffentlichung: | 2020 |
Medientyp: | academicJournal |
ISSN: | 0268-1242 (print) |
DOI: | 10.1088/1361-6641/ab78f4 |
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