CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory.
In: Science Advances, Jg. 7 (2021-01-13), Heft 3, S. 1-10
Online
academicJournal
Zugriff:
The article offers information on CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory. It mentions the effort to develop ferroelectric memory based on perovskite oxides on Silicon, formation of unwanted interfacial layer substantially compromises the performance of the ferroelectric memory.
Titel: |
CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory.
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Autor/in / Beteiligte Person: | Kim, Min-Kyu ; Kim, Ik-Jyae ; Lee, Jang-Sik |
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Zeitschrift: | Science Advances, Jg. 7 (2021-01-13), Heft 3, S. 1-10 |
Veröffentlichung: | 2021 |
Medientyp: | academicJournal |
ISSN: | 2375-2548 (print) |
DOI: | 10.1126/sciadv.abe1341 |
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