Effects of LaNiO 3 Buffer Layer Thickness on the Ferro- and Piezoelectric Properties of PZT Films.
In: Integrated Ferroelectrics, Jg. 64 (2004-06-01), Heft 1, S. 125-133
academicJournal
Zugriff:
Pb(Zr,Ti)O 3 films with MPB composition were prepared onto the LaNiO 3 (LNO) buffer layer deposited by RF magnetron sputtering. The buffer layer with thickness varying from 5–50 nm was deposited to control the texture of PZT film. The orientation of PZT films is found to be influenced by the LNO buffer layer, controlling either causes the texture of PZT films to be randomly oriented or preferentially oriented in (100) texture. The dependence of the electrical properties of PZT films on the thickness of the buffer layer was evaluated using polarization-electric field (P-E) curve, and the piezoelectric property was measured by the pneumatic loading method. The ferroelectric and piezoelectric properties are discussed in conjunction with different preferred orientations. [ABSTRACT FROM AUTHOR]
Titel: |
Effects of LaNiO 3 Buffer Layer Thickness on the Ferro- and Piezoelectric Properties of PZT Films.
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Autor/in / Beteiligte Person: | Kim, H. ; Kim, J. H. ; Choo, W. |
Zeitschrift: | Integrated Ferroelectrics, Jg. 64 (2004-06-01), Heft 1, S. 125-133 |
Veröffentlichung: | 2004 |
Medientyp: | academicJournal |
ISSN: | 1058-4587 (print) |
DOI: | 10.1080/10584580490894131 |
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