A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor.
In: Microelectronics Journal, Jg. 124 (2022-06-01), S. N.PAG
academicJournal
Zugriff:
A 640 × 512 readout integrated circuit (ROIC) for colloidal quantum dots (CQDs) infrared image sensor is presented in this paper. An optimized buffered direct injection (BDI) pixel circuit and a low power rail-to-rail output buffer are proposed to achieve higher array-level consistency of output voltage. The ROIC can process photocurrent of CQDs detector from 100 fA to 100 pA with a conversion gain (CG) of 2.13μV/e−, full well capacity (FWC) of 4.6 × 105e− and readout noise of 100e−. With 1.8 V power supply for both digital and analog modules, the output signal swing exceeds 1 V and performs linearity over 99.95% under different PVT conditions. The ROIC is designed and simulated with SMIC 0.18 μm mixed-signal 1-poly 6-metal (1P6M) process and the die size is 11.13 mm × 8.78 mm. [ABSTRACT FROM AUTHOR]
Titel: |
A 640×512 ROIC with optimized BDI input stage and low power output buffer for CQDs-based infrared image sensor.
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Autor/in / Beteiligte Person: | Li, Hao ; Hu, Ang ; Nie, Zheng ; Liu, Dongsheng ; Niu, Guangda ; Gao, Liang ; Tang, Jiang |
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Zeitschrift: | Microelectronics Journal, Jg. 124 (2022-06-01), S. N.PAG |
Veröffentlichung: | 2022 |
Medientyp: | academicJournal |
ISSN: | 0026-2692 (print) |
DOI: | 10.1016/j.mejo.2022.105435 |
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