Drain and Gate Current LF Noise in Advanced CMOS devices with Ultrathin gate Oxides.
In: AIP Conference Proceedings, Jg. 780 (2005-08-25), Heft 1, S. 315-318
Konferenz
Zugriff:
This paper presents the main results of our study on the low-frequency noise characteristics of ultrathin oxide gate oxide MOSFETs representative of several sub 90 nm CMOS technologies. Simple analytical models for this device are presented and used for interpretation of noise measurements. For the noise data interpretation, a simple drain and gate current noise model based on a flat band voltage fluctuation concept are developed and were shown to account for the overall drain current and gate current noise behavior. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]
| Titel: |
Drain and Gate Current LF Noise in Advanced CMOS devices with Ultrathin gate Oxides.
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| Autor/in / Beteiligte Person: | Contaret, T. ; Romanjek, K. ; Ghibaudo, G. ; Chroboczek, J. A. ; Bœuf, F. ; Skotnicki, T. |
| Zeitschrift: | AIP Conference Proceedings, Jg. 780 (2005-08-25), Heft 1, S. 315-318 |
| Quelle: | 2005, Vol. 780 Issue 1, p315-318. 4p.; Jg. 780 (2005-08-25) 1, S. 315-318 |
| Veröffentlichung: | 2005 |
| Medientyp: | Konferenz |
| ISSN: | 0094-243X (print) |
| DOI: | 10.1063/1.2036758 |
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