Characterization of Active Pixel Sensors in 0.25 μm CMOS Technology.
In: IEEE Transactions on Nuclear Science, Jg. 52 (2005-10-03), Heft 5, S. 1887-1891
Online
academicJournal
Zugriff:
We are developing CMOS monolithic active pixel sensors for high energy physics applications. We have successfully produced three test structures. They feature several different pixel types including a Flexible APS (FAPS). The FAPS has a 10 deep pipeline in each pixel. This is specifically designed with the beam structure of the TESLA proposal for the Linear Collider in mind. Here results demonstrating that the standard active pixel devices are still operating well after a fluence of 1014 p/cm² will be reported. Furthermore, the response of the FAPS to minimum ionizing particles (MIPs) from a 106Ru β-source are presented. The obtained S/N ratio for the 10 cells of the FAPS varies between 15 and 17. [ABSTRACT FROM AUTHOR]
Titel: |
Characterization of Active Pixel Sensors in 0.25 μm CMOS Technology.
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Autor/in / Beteiligte Person: | Velthuis, J. J. ; Allport, P. P. ; Casse, G. ; Evans, A. ; Turchetta, R. ; Tyndel, M. ; Villani, G. |
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Zeitschrift: | IEEE Transactions on Nuclear Science, Jg. 52 (2005-10-03), Heft 5, S. 1887-1891 |
Veröffentlichung: | 2005 |
Medientyp: | academicJournal |
ISSN: | 0018-9499 (print) |
DOI: | 10.1109/TNS.2005.856915 |
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