CHARACTERISTIC OF (100)-TEXTURED (Pb x Sr 1 -x )TiO 3 THIN FILMS USED FOR DRAM AND TUNABLE DEVICE APPLICATION.
In: Integrated Ferroelectrics, Jg. 80 (2006-03-01), Heft 1, S. 395-405
academicJournal
Zugriff:
The (Pb x Sr 1-x )TiO 3 (PST) thin films were deposited on LaNiO 3 (LNO(1 0 0))/ Pt/Ti/SiO 2 /Si substrates electrode by RF-magnetron sputtering using three different Pb target composition ranging from 32.5%∼⃒37.5% and different process condition. Structural and dielectric properties of the PST thin films for tunable microwave and DRAM application were investigated. The PST thin films deposited at 400°C show higher dielectric constant than those post-annealed at 600°C because of better crystallization. The former also have lower leakage current around 10 -8 A/cm 2 up to applied field of 350 kv/cm, which is suitable for DRAM application. On the other hand, the post-annealed PST thin films have satisfactory tunability around 58% and figure of merit around 30, which are more suitable for microwave device application. [ABSTRACT FROM AUTHOR]
Titel: |
CHARACTERISTIC OF (100)-TEXTURED (Pb x Sr 1 -x )TiO 3 THIN FILMS USED FOR DRAM AND TUNABLE DEVICE APPLICATION.
|
---|---|
Autor/in / Beteiligte Person: | Chiou, Yan-Kai ; Wu, Tai-Bor |
Zeitschrift: | Integrated Ferroelectrics, Jg. 80 (2006-03-01), Heft 1, S. 395-405 |
Veröffentlichung: | 2006 |
Medientyp: | academicJournal |
ISSN: | 1058-4587 (print) |
DOI: | 10.1080/10584580600663110 |
Schlagwort: |
|
Sonstiges: |
|