A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy
In: Journal of Crystal Growth, Jg. 237-239 (2002-04-02), Heft 1-2, S. 1460-1465
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Zugriff:
In this paper we describe a completely new technique that is named as vertical microchannel epitaxy (V-MCE). By using V-MCE, reduction in both dislocation density and residual stress generated in highly mismatched heteroepitaxy, such as GaAs on Si, can be accomplished in molecular beam epitaxy. A narrow window opened in an SiO2 is used to grow GaAs selectively to get a vertical structure by V-MCE. Using the optimized growth condition, we have successfully grown V-MCE GaAs layers on Si (0 0 1) substrates with a high aspect ratio of about 2.0. A high aspect ratio is beneficial for the reduction of both dislocations and residual stress. From the observation of etch pit density it is found that a large number of dislocations went out from the side surfaces of the layer. Photoluminescence study indicates that V-MCE is also useful to release the residual stress in the heteroepitaxial layer. [Copyright &y& Elsevier]
Titel: |
A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy
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Autor/in / Beteiligte Person: | Matsunaga, Y. ; Naritsuka, S. ; Nishinaga, T. |
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Zeitschrift: | Journal of Crystal Growth, Jg. 237-239 (2002-04-02), Heft 1-2, S. 1460-1465 |
Veröffentlichung: | 2002 |
Medientyp: | academicJournal |
ISSN: | 0022-0248 (print) |
DOI: | 10.1016/S0022-0248(01)02290-4 |
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